Abstract:The work illustrates the manipulation of imprint fields (Eimp) through bottom ILs selection, which can substantially impact the balance between polarization up and down (PUP/PDOWN) in ferroelectric tunnel junctions (FTJs). Specifically, for Al2O3/HZO structure, Eimp stabilizes PUP and destabilizes PDOWN, leading to an asymmetric depolarization behavior. In contrast, for TiO2/HZO structure, Eimp can be mitigated, resulting in a more balanced configuration of PUP/PDOWN. Electro‐resistance (ER) plays a crucial role in the application of hafnia‐based ferroelectric tunnel junctions (FTJs), pivotal devices widely acknowledge for their potential in non‐volatile memory and neuromorphic networks. Leveraging atomic layer deposition (ALD) enhances the flexibility in fabricating bilayer FTJs by combining a ferroelectric layer with another oxide layer. Introducing additional layers is necessary to achieve a sufficient storage window for implementing intriguing functions, albeit at the risk of increased depolarization field strength. Hence, selecting a suitable inserted layer becomes paramount. In this study, a novel strategy to enhance the performance of Ge‐based Hf0.5Zr0.5O2 FTJs is presented by incorporating bottom interfacial layers (ILs) with distinct band energy characteristics. The optimized FTJs exhibit significantly improved endurance, lower coercive voltage, and enhanced retention properties. Notably, an intriguing asymmetric retention behavior driven by the imprint field (Eimp) is observed, which can be mitigated by integrating TiO2 ILs. Most importantly, an effective method to manipulate depolarization behavior in hafnia‐based devices through ILs is introduced, leading to enhanced non‐volatility and synaptic behavior in FTJs.

Improved Ferroelectricity and Tunneling Electro Resistance in Zr-Rich HfxZr1-xO2 Ferroelectric Tunnel Junction

Improved Ferroelectricity and Tunneling Electroresistance by Inducing the ZrO2 Intercalation Layer in La:HfO2 Thin Films

Phase Transitions and Anti-Ferroelectric Behaviors in Hf1-xZrxO2 Films

HfZrO<sub>x</sub>-Based Ferroelectric Tunnel Junction With Crested Symmetric Band Structure Engineering

Electroresistance in metal/ferroelectric/semiconductor tunnel junctions based on a Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> barrier

Enhanced Electro‐Resistance and Tunable Asymmetric Depolarization Behavior in Hf0.5Zr0.5O2 Ferroelectric Tunnel Junction by Bottom Oxide Interfacial Layer

Enhancement of Ferroelectricity and Homogeneity of Orthorhombic Phase in Hf0.5Zr0.5O2 Thin Films

Stabilizing the Ferroelectric Phase of Hf_{0.5}Zr_{0.5}O_{2} Thin Films by Charge Transfer.

Enhancement of ferroelectricity and homogeneity of orthorhombic phase in Hf 0.5 Zr 0.5 O 2 thin films

Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer

Engineering Hf 0.5 Zr 0.5 O 2 Ferroelectric/Anti- Ferroelectric Phases With Oxygen Vacancy and Interface Energy Achieving High Remanent Polarization and Dielectric Constants

Stabilizing the Ferroelectric Phase in HfAlO Ferroelectric Tunnel Junction with Different Bottom Electrodes

Ferroelectricity of pristine Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> films fabricated by atomic layer deposition

Tensile Stress Regulated Microstructures and Ferroelectric Properties of Hf0.5Zr0.5O2 Films

Excellent Ferroelectric Properties of Hf0.5Zr0.5O2 Thin Films Induced by Al2O3 Dielectric Layer

Atomic layer etching of ferroelectric hafnium zirconium oxide thin films enables giant tunneling electroresistance

Enhanced polarization and endurance properties of ZrO2-based ferroelectric capacitor using HfO2interfacial layer

Leakage mechanism in ferroelectric Hf0.5Zr0.5O2 epitaxial thin films

Engineering Hf 0.5 Zr 0.5 O 2 Ferroelectric Tunnel Junctions With Amorphous WO x Bottom Electrodes Achieving High Remanent Polarization and Record Low-Operating Voltage

Improved Ferroelectricity and Endurance of Hf0.5Zr0.5O2 Thin Films in Low Thermal Budget with Novel Bottom Electrode Doping Technology

Enhancement of the Ferroelectricity by Interface Engineering Observed by in Situ Transmission Electron Microscope