Abstract:This research presents the optimal Al doping concentration in ferroelectric HAO thin films, achieving high remanent polarization and a large tunneling electroresistance ratio. The device shows reliable endurance properties as well as synaptic characteristics such as spike‐time‐dependent plasticity, long‐term potentiation, long‐term depression, paired‐pulse facilitation, and reservoir computing. These applications are essential in implementing nonvolatile memory in neuromorphic devices. Since HfOx‐based ferroelectric tunnel junctions (FTJs) are attractive compared to perovskite‐based FTJs and other emerging memory devices, they are being actively studied recently. They have advantages such as a simple metal–insulator–metal structure, complementary metal oxide semiconductor (CMOS) compatibility, non‐destructive operation, and low power consumption. Moreover, doped HfOx‐based FTJs are in the spotlight in terms of neuromorphic engineering as a way of advancing from the von Neumann structure. In particular, Al dopant is effective for inducing ferroelectric properties due to its smaller radius than that of Hf. The optimal concentration of Al varies depending on the device materials and the annealing conditions during deposition. Therefore, in‐depth research is required for neuromorphic applications. Herein, the properties of FTJ devices according to Al doping concentrations are analyzed. Subsequently, using the device with the highest remanent polarization, neuromorphic applications are implemented, including spike‐timing‐dependent plasticity (STDP), paired‐pulse facilitation (PPF), long‐term potentiation, and depression. The characteristics in different frequency regions are also studied to satisfy the demand for fast switching. Finally, the FTJ device is used as a physical reservoir in reservoir computing for efficient processing of time‐dependent inputs.

Stabilizing the Ferroelectric Phase in HfAlO Ferroelectric Tunnel Junction with Different Bottom Electrodes

Phase Transitions and Anti-Ferroelectric Behaviors in Hf1-xZrxO2 Films

The Doping Effect on the Intrinsic Ferroelectricity in Hafnium Oxide-Based Nano-Ferroelectric Devices

Enhanced Electro‐Resistance and Tunable Asymmetric Depolarization Behavior in Hf0.5Zr0.5O2 Ferroelectric Tunnel Junction by Bottom Oxide Interfacial Layer

Understanding the Effect of Oxygen Content on Ferroelectric Properties of Al-Doped HfO Thin Films

Enhancement of the Ferroelectricity by Interface Engineering Observed by in Situ Transmission Electron Microscope

Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer

Stabilizing the Ferroelectric Phase of Hf_{0.5}Zr_{0.5}O_{2} Thin Films by Charge Transfer.

HfZrO<sub>x</sub>-Based Ferroelectric Tunnel Junction With Crested Symmetric Band Structure Engineering

Electroresistance in metal/ferroelectric/semiconductor tunnel junctions based on a Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> barrier

Improved Ferroelectricity and Tunneling Electro Resistance in Zr-Rich HfxZr1-xO2 Ferroelectric Tunnel Junction

Improved Ferroelectricity and Endurance of Hf0.5Zr0.5O2 Thin Films in Low Thermal Budget with Novel Bottom Electrode Doping Technology

Impact of annealing temperature on the remanent polarization and tunneling electro-resistance of ferroelectric Al-doped HfOx tunnel junction memory.

Tuning the ferroelectricity of Hf0.5Zr0.5O2 with alloy electrodes

Ferroelectricity of Hf 0.5 Zr 0.5 O2 Thin Films Free From the Influence of Electrodes by Using Al2O3 Capping Layers

Effect of Al Concentration on Ferroelectric Properties in HfAlOx‐Based Ferroelectric Tunnel Junction Devices for Neuroinspired Applications

Enhanced Ferroelectricity in Hf‐Based Ferroelectric Device with ZrO2 Regulating Layer

Effect of Lanthanum-Aluminum Co-Doping on Structure of Hafnium Oxide Ferroelectric Crystals.

Intrinsic Variations of Ultrathin Hafnium Oxide-Based Ferroelectric Tunnel Junctions Induced by Ferroelectric-Dielectric Phase Fluctuations

Neuromorphic synaptic applications of HfAlOx-based ferroelectric tunnel junction annealed at high temperatures to achieve high polarization

Inductive Crystallization Effect of Atomic-Layer-deposited Hf0.5Zr0.5O2 Films for Ferroelectric Application