Abstract:The work illustrates the manipulation of imprint fields (Eimp) through bottom ILs selection, which can substantially impact the balance between polarization up and down (PUP/PDOWN) in ferroelectric tunnel junctions (FTJs). Specifically, for Al2O3/HZO structure, Eimp stabilizes PUP and destabilizes PDOWN, leading to an asymmetric depolarization behavior. In contrast, for TiO2/HZO structure, Eimp can be mitigated, resulting in a more balanced configuration of PUP/PDOWN. Electro‐resistance (ER) plays a crucial role in the application of hafnia‐based ferroelectric tunnel junctions (FTJs), pivotal devices widely acknowledge for their potential in non‐volatile memory and neuromorphic networks. Leveraging atomic layer deposition (ALD) enhances the flexibility in fabricating bilayer FTJs by combining a ferroelectric layer with another oxide layer. Introducing additional layers is necessary to achieve a sufficient storage window for implementing intriguing functions, albeit at the risk of increased depolarization field strength. Hence, selecting a suitable inserted layer becomes paramount. In this study, a novel strategy to enhance the performance of Ge‐based Hf0.5Zr0.5O2 FTJs is presented by incorporating bottom interfacial layers (ILs) with distinct band energy characteristics. The optimized FTJs exhibit significantly improved endurance, lower coercive voltage, and enhanced retention properties. Notably, an intriguing asymmetric retention behavior driven by the imprint field (Eimp) is observed, which can be mitigated by integrating TiO2 ILs. Most importantly, an effective method to manipulate depolarization behavior in hafnia‐based devices through ILs is introduced, leading to enhanced non‐volatility and synaptic behavior in FTJs.

Improved Ferroelectricity and Tunneling Electroresistance by Inducing the ZrO2 Intercalation Layer in La:HfO2 Thin Films

Improved Ferroelectricity and Tunneling Electro Resistance in Zr-Rich HfxZr1-xO2 Ferroelectric Tunnel Junction

Enhanced Electro‐Resistance and Tunable Asymmetric Depolarization Behavior in Hf0.5Zr0.5O2 Ferroelectric Tunnel Junction by Bottom Oxide Interfacial Layer

HfZrO<sub>x</sub>-Based Ferroelectric Tunnel Junction With Crested Symmetric Band Structure Engineering

Stabilizing the Ferroelectric Phase of Hf_{0.5}Zr_{0.5}O_{2} Thin Films by Charge Transfer.

Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer

Ferroelectric and Antiferroelectric Phenomenon in Lanthanum Doped Hafnium Based Thin Films

Enhanced Ferroelectricity in Hf‐Based Ferroelectric Device with ZrO2 Regulating Layer

Electroresistance in metal/ferroelectric/semiconductor tunnel junctions based on a Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> barrier

Enhanced polarization and endurance properties of ZrO2-based ferroelectric capacitor using HfO2interfacial layer

Enhancement of Tunneling Electroresistance by Interfacial Cation Intermixing in Ferroelectric Tunnel Junctions

Enhancement of Ferroelectricity and Homogeneity of Orthorhombic Phase in Hf0.5Zr0.5O2 Thin Films

Interface Effects Induced by a Zr O 2 Seed Layer on the Phase Stability and Orientation of Hf O 2 Ferroelectric Thin Films: A First-Principles Study

Enhancement of ferroelectricity and homogeneity of orthorhombic phase in Hf 0.5 Zr 0.5 O 2 thin films

Interface-engineered ferroelectricity of epitaxial Hf0.5Zr0.5O2 thin films

Improving the ferroelectric properties of Lu doped Hf 0.5 Zr 0.5 O 2 thin films by capping a CeO x layer

Enhancement of the Ferroelectricity by Interface Engineering Observed by in Situ Transmission Electron Microscope

Excellent Ferroelectric Properties of Hf0.5Zr0.5O2 Thin Films Induced by Al2O3 Dielectric Layer

The Doping Effect on the Intrinsic Ferroelectricity in Hafnium Oxide-Based Nano-Ferroelectric Devices

Conduction mechanisms of ferroelectric La:HfO 2 ultrathin films

Inductive Crystallization Effect of Atomic-Layer-deposited Hf0.5Zr0.5O2 Films for Ferroelectric Application