Abstract:The comparison of Hf0.5Zr0.5O2/La0.67Sr0.33MnO3 (HZO/LSMO) systems with and without the LSMO top electrode reveals the LSMO's enhancement of HZO's structure and ferroelectric properties. The LSMO electrode prevents the formation of the nonpolar monoclinic phase and stabilizes the polar rhombohedral phase. Additionally, it improves leakage current, wake‐up effect, and fatigue behavior of HZO films by reducing the oxygen vacancies. Hafnium‐oxide‐based ferroelectrics have garnered considerable research interest, primarily for their robust ferroelectricity at the nanoscale and their high compatibility with complementary metal‐oxide‐semiconductors processes. However, the impact of electrodes on the ferroelectric properties of hafnium‐oxide layer, particularly that of top electrodes, is not yet fully understood even in the simplest capacitor geometry. In this study, the La0.67Sr0.33MnO3/Hf0.5Zr0.5O2 (LSMO/HZO) epitaxial heterostructure is utilized as a model system to conduct a systematic comparative study on ferroelectricity between the LSMO/HZO (H‐LS) bilayer and LSMO/HZO/LSMO (LS‐H‐LS) trilayer samples. In comparison to the H‐LS sample, the LS‐H‐LS sample exhibits a more uniform polar domain configuration and larger ferroelectric polarization. Moreover, the LS‐H‐LS sample exhibits significant improvements in leakage, endurance, and retention. These substantial enhancements in ferroelectricity are likely due to interfacial stress imposed by the LSMO capping layer and its capacity to accommodate extra oxygen vacancies. These results underscore the pivotal role of oxide‐based top electrodes in determining the ferroelectricity of hafnium‐oxide‐based heterostructures, providing crucial insights for optimizing the performance of innovative ferroelectric devices.

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Improving the Ferroelectric Properties of Lu Doped Hf0.5Zr0.5O2 Thin Films by Capping a CeOx Layer

Improving the ferroelectric properties of Lu doped Hf0.5Zr0.5O2thin films by capping a CeOxlayer.

Improvement of Ferroelectricity in Ce-Doped Hf0.5Zr0.5O2 Thin Films

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Realization of Excellent Ferroelectricity in PDA-derived Hf0.5Zr0.5O2 Films Through Insertion of an Ultrathin Ti Metal Layer

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Improvement of Remanent Polarization of CeO2–HfO2 Solid Solution Thin Films on Si Substrates by Chemical Solution Deposition

Improved Ferroelectricity and Endurance in Ca Doped Hf0.5Zr0.5O2 Films

Excellent ferroelectric Hf0.5Zr0.5O2 thin films with ultra-thin Al2O3 serving as capping layer

Improvement of remanent polarization of CeO 2 –HfO 2 solid solution thin films on Si substrates by chemical solution deposition

Improvement of Ferroelectricity and Endurance in Sr Doped Hf0.5Zr0.5O2 Films

Optimization of Ferroelectricity and Endurance of Hafnium Zirconium Oxide Thin Films by Controlling Element Inhomogeneity

Improved ferroelectric properties of CMOS back-end-of-line compatible Hf0.5Zr0.5O2 thin films by introducing dielectric layers

Enhanced Polarization and Endurance Properties of ZrO2-based Ferroelectric Capacitor Using HfO2 Interfacial Layer

Optimizing the Ferroelectric Performance of Hf0.5Zr0.5O2 Epitaxial Film by La0.67Sr0.33MnO3 Capping Layer