Abstract:Abstract Ferroelectric hafnia-based thin films have attracted intense attention due to their compatibility with complementary metal-oxide-semiconductor technology. However, the ferroelectric orthorhombic phase is thermodynamically metastable. Various efforts have been made to stabilize the ferroelectric orthorhombic phase of hafnia-based films such as controlling the growth kinetics and mechanical confinement. Here, we demonstrate a key interface engineering strategy to stabilize and enhance the ferroelectric orthorhombic phase of the Hf 0.5 Zr 0.5 O 2 thin film by deliberately controlling the termination of the bottom La 0.67 Sr 0.33 MnO 3 layer. We find that the Hf 0.5 Zr 0.5 O 2 films on the MnO 2 -terminated La 0.67 Sr 0.33 MnO 3 have more ferroelectric orthorhombic phase than those on the LaSrO-terminated La 0.67 Sr 0.33 MnO 3 , while with no wake-up effect. Even though the Hf 0.5 Zr 0.5 O 2 thickness is as thin as 1.5 nm, the clear ferroelectric orthorhombic (111) orientation is observed on the MnO 2 termination. Our transmission electron microscopy characterization and theoretical modelling reveal that reconstruction at the Hf 0.5 Zr 0.5 O 2 / La 0.67 Sr 0.33 MnO 3 interface and hole doping of the Hf 0.5 Zr 0.5 O 2 layer resulting from the MnO 2 interface termination are responsible for the stabilization of the metastable ferroelectric phase of Hf 0.5 Zr 0.5 O 2 . We anticipate that these results will inspire further studies of interface-engineered hafnia-based systems.

Engineering Hf 0.5 Zr 0.5 O 2 Ferroelectric/Anti- Ferroelectric Phases With Oxygen Vacancy and Interface Energy Achieving High Remanent Polarization and Dielectric Constants

Phase Transitions and Anti-Ferroelectric Behaviors in Hf1-xZrxO2 Films

Orthorhombic-I Phase and Related Phase Transitions: Mechanism of Superior Endurance <tex>$(> 10^{14})$</tex> of HfZrO Anti-ferroelectrics for DRAM Applications

Orthorhombic-I Phase and Related Phase Transitions: Mechanism of Superior Endurance (>1014) of HfZrO Anti-ferroelectrics for DRAM Applications

Enhanced Polarization and Endurance Properties of ZrO2-based Ferroelectric Capacitor Using HfO2 Interfacial Layer

Enhanced polarization and endurance properties of ZrO2-based ferroelectric capacitor using HfO2interfacial layer

Large ferroelectric polarization and high dielectric constant in HfO2-based thin films via Hf0.5Zr0.5O2/ZrO2 nanobilayer engineering

Enhancement of Ferroelectricity and Homogeneity of Orthorhombic Phase in Hf0.5Zr0.5O2 Thin Films

Engineering Hf 0.5 Zr 0.5 O 2 Ferroelectric Tunnel Junctions With Amorphous WO x Bottom Electrodes Achieving High Remanent Polarization and Record Low-Operating Voltage

Enhancement of the Ferroelectricity by Interface Engineering Observed by in Situ Transmission Electron Microscope

Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer

Interface-engineered ferroelectricity of epitaxial Hf0.5Zr0.5O2 thin films

Influence of Interface on the Domain Polarization Orientation in Ferroelectric Hf0.5Zr0·5O2 Thin Films

Enhancement of ferroelectricity and homogeneity of orthorhombic phase in Hf 0.5 Zr 0.5 O 2 thin films

The Enhanced Polarization Switching Speed and Endurance in Hf 0.5 Zr 0.5 O 2 Ferroelectric Thin Film by Modulating Oxygen Dose in Ferroelectric Layers

Interfacial Regulation of Dielectric Properties in Ferroelectric Hf0.5Zr0.5O2 Thin Films

The Enhanced Polarization Switching Speed and Endurance in Hf0.5Zr0.5O2 Ferroelectric Thin Film by Modulating Oxygen Dose in Ferroelectric Layers

Improved Ferroelectricity and Tunneling Electro Resistance in Zr-Rich HfxZr1-xO2 Ferroelectric Tunnel Junction

Ferroelectricity of Hf 0.5 Zr 0.5 O2 Thin Films Free From the Influence of Electrodes by Using Al2O3 Capping Layers

A Stable Rhombohedral Phase in Ferroelectric Hf(Zr)1+xO2 Capacitor with Ultralow Coercive Field.

Tuning the ferroelectricity of Hf0.5Zr0.5O2 with alloy electrodes