Abstract:The integration of thin Hf0.5Zr0.5O2 ferroelectric and SrTiO3‐δ semiconductor films in a field effect memristor on silicon, breaks new grounds for the development of ferroelectric artificial electronic synapses. By dynamically adjusting their synaptic strength to mimic short‐ and long‐term memory plasticity, such devices can emulate the behavior of biological synapses enabling high‐performance, energy‐efficient, and scalable circuits that are key to the development of next‐generation neuromorphic computers. Synapses play a vital role in information processing, learning, and memory formation in the brain. By emulating the behavior of biological synapses, electronic synaptic devices hold the promise of enabling high‐performance, energy‐efficient, and scalable neuromorphic computing. Ferroelectric memristive devices integrate the characteristics of both ferroelectric and memristive materials and present a far‐reaching potential as artificial synapses. Here, it is reported on a new ferroelectric device on silicon, a field‐effect memristor, consisting of an epitaxial ultrathin ferroelectric Hf0.5Zr0.5O2 film sandwiched between an epitaxial highly doped oxide semiconductor SrTiO3‐δ and a top metal. Upon a low voltage of less than 2 V, the field‐effect modulation in the semiconductor enables to access multiple states. The device works in a large time domain ranging from milliseconds down to tens of nanoseconds. By gradually switching the polarization by identical pulses, the ferroelectric diode devices can dynamically adjust the synaptic strength to mimic short‐ and long‐term memory plasticity. Ionic contributions due to redox processes in the oxide semiconductor beneficially influence the device operation and retention.

High-Conductance, Ohmic-like HfZrO$_4$ Ferroelectric Memristor

Hf0.5Zr0.5O2-based Ferroelectric Memristor with Multilevel Storage Potential and Artificial Synaptic Plasticity

High-Speed Switching and Giant Electroresistance in an Epitaxial Hf 0.5 Zr 0.5 O 2 -Based Ferroelectric Tunnel Junction Memristor

High-Speed Switching and Giant Electroresistance in an Epitaxial Hf0.5Zr0.5O2-Based Ferroelectric Tunnel Junction Memristor

Forming and Compliance-free Operation of Low-energy, Fast-switching HfO$_x$S$_y$/HfS$_2$ Memristors

HfO2:Gd-based ferroelectric memristor as bio-synapse emulators

A back-end, CMOS compatible ferroelectric Field Effect Transistor for synaptic weights

Memristive response and neuromorphic functionality of polycrystalline ferroelectric Ca:HfO$_{2}$-based devices

Quasi-Zero-Dimensional Ferroelectric Polarization Charges-Coupled Resistance Switching with High-Current Density in Ultrascaled Semiconductors.

Electronic Synapses Enabled by an Epitaxial SrTiO3‐δ / Hf0.5Zr0.5O2 Ferroelectric Field‐Effect Memristor Integrated on Silicon

Ferroelectric Polarization and Conductance Filament Coupling for Large Window and High-Reliability Resistive Memory and Energy-Efficient Synaptic Devices

HfAlO-based Ferroelectric Memristors for Artificial Synaptic Plasticity

Homo-layer hafnia-based memristor with large analog switching window

Epitaxial Ferroelectric Hf0.5Zr0.5O2 Thin Films and Their Implementations in Memristors for Brain‐Inspired Computing

Flexible Quasi‐van der Waals Ferroelectric Hafnium‐Based Oxide for Integrated High‐Performance Nonvolatile Memory

High-performance Van Der Waals Antiferroelectric CuCrP2S6-based Memristors.

Designing High‐Performance Storage in HfO2/BiFeO3 Memristor for Artificial Synapse Applications

A Back-End-Of-Line Compatible, Ferroelectric Analog Non-Volatile Memory

Silicon‐Compatible Ferroelectric Tunnel Junctions with A SiO2/Hf0.5Zr0.5O2 Composite Barrier as Low‐Voltage And Ultra‐High‐Speed Memristors

Low Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate Structure.

HfO2-Based Memristor As an Artificial Synapse for Neuromorphic Computing with Tri-Layer HfO2/BiFeO3/HfO2 Design