Abstract:The accumulation and motion of metal ions in the ferroelectric oxide and layered dichalcogenides play a critical role in the development of nonvolatile, adaptive memories for applications in neuromorphic computing. To further simplify and control this fundamental process in electronic devices, anion conductors based memristor is first developed by using layered double hydroxide (LDH) as the active materials, where the intercalated ions in subatomic interlayer have superior ion conductivity exhibiting memristive effect. The results show that LDH memristors exhibit abnormal resistive switching behavior with ON/OFF ratio up to 105 at room temperature with the set/reset voltage distribution of 0.3 V. Further studying reveals that the LDH memristior shows stable abnormal unipolar characteristics, following the space‐charge‐limited current transport theory. In situ conductive atomic force microscopy measurements visualize the formation of conductive channels under external bias and significantly reveal the linear correlation between set voltage and the thickness of LDH with the slope of 0.13 V per molecular layer. The results indicate ions may play the key role in realizing set and reset process. The newly reported resistive switching behavior of LDH may shed lights on the development of more intercalated 2D materials based memristor. The anion conductor based memristors are first investigated with abnormal unipolar resistive switching behavior. The lamellar feature of layered double hydroxide (LDH) endows the construction of ultrathin memristive configuration, exhibiting superior switching ratio and high durability. Both space‐charge‐limited current transport simulation and in situ conductive atomic force microscopy (C‐AFM) measurements suggest the unique conduction mechanism, revealing the potential for intercalated 2D materials in electronic devices.

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