Abstract:Non-volatile magnetic storage, from 1940s magnetic core to present day racetrack memory and magnetic anisotropy switching devices rely on the metastability of magnetic domains to store information. However, the inherent inefficiency of converting the information-carrying charge current into magnetization switching sets fundamental limitations in energy consumption. Other non-magnetic non-volatile memories such as memristors, ferroelectric memory and phase change memory devices also rely on energetically relatively costly crystal structural rearrangements to store information. In contrast, conventional electronic charge states in quantum dots for example, can be switched in femtoseconds with high efficiency, but any stored information dissipates rapidly. Here we present a radically different approach in the form of a charge-configuration memory (CCM) device that relies on charge-injection-driven electronic crystal melting and topological protection of the resulting electronic domain configurations of a two-dimensional electronic crystal to store information. With multiprobe scanning tunneling microscopy (STM) we show microscopically, within an operational device, how dislocations in the domain ordering lead to metastability by a mechanism that is topologically equivalent to magnetic bubble memory. The devices have a very small switching energy (<2.2 fJ/bit), ultrafast switching speed of <11 ps and operational range over more than 3 orders of magnitude in temperature (<250 mK ~ 190 K). Together with their simple functionality, a large resistance switching ratio, straightforward fabrication and impressive endurance, CCM devices introduce a new memory paradigm in emerging cryo-computing and other high-performance computing applications that require ultrahigh speed and low energy consumption.

Non-volatile Memory Based on Atomic Crystals

2D Atomic Crystals: A Promising Solution for Next‐Generation Data Storage

Atomic Crystals Resistive Switching Memory

Recent Progress of Non-Volatile Memory Devices Based on Two-Dimensional Materials

Comprehensive Performance Quasi-Non-Volatile Memory Compatible with Large-Scale Preparation by Chemical Vapor Deposition

Atomically sharp interface enabled ultrahigh-speed non-volatile memory devices

Spin and Charge Related Data Storage in Transition Metal Oxides

Integrated Memory Devices Based on 2D Materials

Ultrafast Non-Volatile Floating-Gate Memory Based on All-2D Materials

Symmetric Ultrafast Writing and Erasing Speeds in Quasi‐Nonvolatile Memory Via Van Der Waals Heterostructures

Phase‐Change Superlattice Materials Toward Low Power Consumption and High Density Data Storage: Microscopic Picture, Working Principles, and Optimization

Demonstration of Nonvolatile Storage and Synaptic Functions in All-Two-Dimensional Floating-Gate Transistors Based on MoS2 Channels

Circuit Level Memory Technologies and Applications based on 2D Materials

Nonvolatile Multistates Memories for High-Density Data Storage

Nonvolatile Multi-States Memories for High-Density Data Storage.

Energy efficient manipulation of topologically protected states in non-volatile ultrafast charge configuration memory devices

A Semi-Floating Gate Memory Based on Van Der Waals Heterostructures for Quasi-Non-volatile Applications

Memory Materials and Devices: from Concept to Application

Advances in Nanocrystal Nonvolatile Memory

Designing Crystallization in Phase-Change Materials for Universal Memory and Neuro-Inspired Computing

Low-voltage Ultrafast Nonvolatile Memory Via Direct Charge Injection Through a Threshold Resistive-Switching Layer