Abstract:Two-dimensional (2D) materials based artificial synapses are important building blocks for the brain-inspired computing systems that are promising in handling large amounts of informational data with high energy-efficiency in the future. However, 2D devices usually rely on deposited or transferred insulators as the dielectric layer, resulting in various challenges in device compatibility and fabrication complexity. Here, we demonstrate a controllable and reliable oxidation process to turn 2D semiconductor HfS2 into native oxide, HfOx, which shows good insulating property and clean interface with HfS2. We then incorporate the HfOx/HfS2 heterostructure into a flash memory device, achieving a high on/off current ratio of ∼105, a large memory window over 60 V, good endurance, and a long retention time over 103 seconds. In particular, the memory device can work as an artificial synapse to emulate basic synaptic functions and feature good linearity and symmetry in conductance change during long-term potentiation/depression processes. A simulated artificial neural network based on our synaptic device achieves a high accuracy of ∼88% in MNIST pattern recognition. Our work provides a simple and effective approach for integrating high-k dielectrics into 2D material-based memory and synaptic devices.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.0c22561?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.0c22561</a>.Figure S1, Raman spectra of the as-exfoliated HfS2 flake and the flake with 15-minute oxidation; Figure S2, cross-sectional STEM-HAADF image and EDX mapping of the HfS2/HfOx/WSe2 structure; Figure S3, schematic illustration of the fabrication process of the flash memory device; Figure S4, transfer curves of 5 devices with identical configuration; Figure S5, transfer curves of devices with different thicknesses of HfOx; Figure S6, transfer curves of FET devices with different configurations; Figure S7, graphical representation of rectangular voltage pulses; Figure S8, LTP/D curves; Figure S9, simulated circuit and schematic of a neuronal node in the neural network; Table S1, comparison of the nonlinearity of LTP and the LTD of our device and those in a previous work; and additional references (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c22561/suppl_file/am0c22561_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

A Scalable Integration Process for Ultrafast Two-Dimensional Flash Memory

Computational Associative Memory with Amorphous Metal‐Oxide Channel 3D NAND‐Compatible Floating‐Gate Transistors

Ultrafast Self-Rectifying Memristors for Advanced In-Memory Computing

Ultrafast non-volatile flash memory based on van der Waals heterostructures

Two-dimensional ferroelectric channel transistors integrating ultra-fast memory and neural computing

Low-voltage Ultrafast Nonvolatile Memory Via Direct Charge Injection Through a Threshold Resistive-Switching Layer

Atomically sharp interface enabled ultrahigh-speed non-volatile memory devices

Controlling Native Oxidation of HfS 2 for 2D Materials Based Flash Memory and Artificial Synapse

A Semi-Floating Gate Memory Based on Van Der Waals Heterostructures for Quasi-Non-volatile Applications

Scalable CMOS back-end-of-line-compatible AlScN/two-dimensional channel ferroelectric field-effect transistors

Symmetric Ultrafast Writing and Erasing Speeds in Quasi‐Nonvolatile Memory Via Van Der Waals Heterostructures

A Highly Scalable Opposite Side Floating-Gate Flash Memory Cell

Integrated Memory Devices Based on 2D Materials

Novel Silicon-Based Flash Cell Structures for Low Power and High Density Memory Applications

Novel Vertical Channel Double Gate Structures for High Density and Low Power Flash Memory Applications.

Novel SONOS and Floating-Gate Flash Memory Cell Structures for High Density and High Reliability Applications

A Multi-Layer Stackable Thin-Film Transistor (TFT) NAND-Type Flash Memory

Large-Scale Integrated Vector-Matrix Multiplication Processor Based on Monolayer MoS2

All WSe2 1T1R resistive RAM cell for future monolithic 3D embedded memory integration

A 2d Heterostructure‐Based Multifunctional Floating Gate Memory Device for Multimodal Reservoir Computing