Abstract:Devices based on charge trapping are a promising solution for Flash memory scaling. The nonconductivity of their storage medium makes them more robust with respect to data loss by charge leakage through the bottom oxide, which, on the contrary sets a hard limit to floating-gate Flash scalability. Their simple processing, highly compatible with CMOS, makes them rapidly integrable into short-term solutions. The well-known SONOS concept however, still suffers from insufficient data throughput and retention. On the other hand, the recently proposed NROM concept, storing two bits in a cell, offers very interesting characteristics by using hot carrier based program/erase operations. However, important drawbacks remain, like insufficient isolation of the bits for scalability, high-power programming, and degradation of the retention after cycling. In this paper, we present a dual-bit trapping device which solves most of these problems by using a split-gate structure which was inspired by the HIMOS concept. The device has a fully self-aligned structure which allows for both bits to be physically isolated in the cell. Those features make it very scalable. Programming can be performed by the very efficient source-side injection mechanism, while erase is done by injection of band-to-band tunneling induced hot holes, which compensate for the trapped electrons. This leads to performances comparable to NROM but with lower power consumption, and lower operating voltages.

A Highly Scalable Opposite Side Floating-Gate Flash Memory Cell

An opposite side floating gate FLASH memory scalable to 20 nm length

Computational Associative Memory with Amorphous Metal‐Oxide Channel 3D NAND‐Compatible Floating‐Gate Transistors

Opposite side floating gate SOI FLASH memory cell

Computational Associative Memory with Amorphous Metal‐Oxide Channel 3D NAND‐Compatible Floating‐Gate Transistors (adv. Electron. Mater. 12/2022)

Novel SONOS and Floating-Gate Flash Memory Cell Structures for High Density and High Reliability Applications

Dual Floating Gate Flash Cell Using Single Poly Processes

Novel Silicon-Based Flash Cell Structures for Low Power and High Density Memory Applications

A Scalable Integration Process for Ultrafast Two-Dimensional Flash Memory

A Semi-Floating Gate Memory Based on SOI Substrate by TCAD Simulation

A Novel Dual-Doping Floating-Gate (ddfg) Flash Memory Featuring Low Power and High Reliability Application

Novel Vertical Channel Double Gate Structures for High Density and Low Power Flash Memory Applications.

A Semi-Floating Gate Memory Based on Van Der Waals Heterostructures for Quasi-Non-volatile Applications

A New Scalable Self-Aligned Dual-Bit Split-Gate Charge-Trapping Memory Device

A Novel Non-Planar Cell Structure for Flash Memory

Metal Floating Gate Memory Device with SiO 2 /hfo 2 Dual-Layer As Engineered Tunneling Barrier

Simulation Of A New Eeprom Flash Memory Cell For High Density Applications

A Novel Vertical Channel Self-Aligned Split-Gate Flash Memory

A Semi‐Floating Memory with 535% Enhancement of Refresh Time by Local Field Modulation

Computational Associative Memory with Amorphous InGaZnO Channel 3D NAND-Compatible FG Transistors

A Novel High-Density Source-Side-Injection Flash Memory Cell with Vertical Channel