Abstract:Ternary content addressable memories (TCAMs) are a special form of computing-in-memory (CiM) circuits that aim to address the so-called memory wall issues by merging the parallel search function with memory blocks. Due to the content addressing nature, TCAMs have been widely utilized for search intensive tasks in low-power, data analytic applications, such as IP routers, associative memories, and learning models. While most state-of-the-art TCAM designs focus on improving the TCAM density by harnessing compact nonvolatile memories (NVMs), little efforts have been spent on reducing and optimizing the energy consumption of the NVM based TCAM. In this paper, by exploiting the Ferroelectric FET (FeFET) as a representative NVM, we propose two compact and energy-aware designs of ferroelectric TCAMs for low power applications. We first introduce a novel 2FeFET based XOR-like gate structure that can also be adopted to other NVMs, and then leverage the structure to propose two TCAM designs that achieve high energy efficiency by either reducing the associated precharge overhead (2FeFET-1T cell), or eliminating the precharge phase typically required by TCAMs (2FeFET-2T cell). We evaluate and compare the designs w.r.t area, search energy and delay at array level with other existing designs, and benchmark the proposed TCAM designs in an associative memory based GPU architecture. The results suggest that the proposed 2FeFET-1T/2FeFET-2T TCAM design consumes 3.03X/8.08X less search energy than the conventional 16T CMOS TCAM, while the proposed design cell area is only 32.1%/39.3% of the latter. Compared with the state-of-the-art 2FeFET only TCAM array, our proposed designs still achieve 1.79X and 4.79X search energy reduction, respectively. Moreover, our proposed designs can achieve, on average, 45.2%/51.5% energy saving compared with the conventional GPU based architecture at the application level.

Computational Associative Memory with Amorphous Metal‐Oxide Channel 3D NAND‐Compatible Floating‐Gate Transistors (adv. Electron. Mater. 12/2022)

Computational Associative Memory with Amorphous Metal‐Oxide Channel 3D NAND‐Compatible Floating‐Gate Transistors

Computational Associative Memory with Amorphous InGaZnO Channel 3D NAND-Compatible FG Transistors

Energy-Aware Designs of Ferroelectric Ternary Content Addressable Memory.

Ferroelectric Ternary Content Addressable Memories for Energy-Efficient Associative Search.

An Energy Efficient Floating Point Computing Infrastructure Embedding Ferroelectric Field Effect Transistor Based Ternary Content Addressable Memories

8F2 Ternary Content Addressable Memory Array Utilizing Interface Passivated Ge Memory-diodes with 2 × 105 Self-rectifying Ratio

Computational Associative Memory Based on Monolithically Integrated Metal-Oxide Thin Film Transistors for Update-Frequent Search Applications

Ternary Content-Addressable Memory Based on a Single Two-Dimensional Transistor for Memory-Augmented Learning

Highly Scaled InGaZnO Ferroelectric Field-Effect Transistors and Ternary Content-Addressable Memory

A Novel High-Density and Low-Power Ternary Content Addressable Memory Design Based on 3D NAND Flash

Non-volatile logic-in-memory ternary content addressable memory circuit with floating gate field effect transistor

Oxide-semiconductor channel ferroelectric field-effect transistors for high-density memory applications: 3D NAND operation and the potential impact of in-plane polarization

Design and Benchmarking of Ferroelectric FET Based TCAM.

Content Addressable Memories and Transformable Logic Circuits Based on Ferroelectric Reconfigurable Transistors for In-Memory Computing

Ultradense One-Memristor Ternary-Content-Addressable Memory Based on Ferroelectric Diodes

A Novel Ambipolar Ferroelectric Tunnel FinFET Based Content Addressable Memory with Ultra-low Hardware Cost and High Energy Efficiency for Machine Learning

Design Exploration of Dynamic Multi-Level Ternary Content-Addressable Memory Using Nanoelectromechanical Relays

Multi-Bit Storage Based on Chalcogenide Thin Film Transistor for High Density Nonvolatile Memory Application

Single-Ferroelectric FET based Associative Memory for Data-Intensive Pattern Matching.

Simulation of Charge Trapping Memory with Novel Structures