Abstract:Ternary content addressable memories (TCAMs) are a special form of computing-in-memory (CiM) circuits that aim to address the so-called memory wall issues by merging the parallel search function with memory blocks. Due to the content addressing nature, TCAMs have been widely utilized for search intensive tasks in low-power, data analytic applications, such as IP routers, associative memories, and learning models. While most state-of-the-art TCAM designs focus on improving the TCAM density by harnessing compact nonvolatile memories (NVMs), little efforts have been spent on reducing and optimizing the energy consumption of the NVM based TCAM. In this paper, by exploiting the Ferroelectric FET (FeFET) as a representative NVM, we propose two compact and energy-aware designs of ferroelectric TCAMs for low power applications. We first introduce a novel 2FeFET based XOR-like gate structure that can also be adopted to other NVMs, and then leverage the structure to propose two TCAM designs that achieve high energy efficiency by either reducing the associated precharge overhead (2FeFET-1T cell), or eliminating the precharge phase typically required by TCAMs (2FeFET-2T cell). We evaluate and compare the designs w.r.t area, search energy and delay at array level with other existing designs, and benchmark the proposed TCAM designs in an associative memory based GPU architecture. The results suggest that the proposed 2FeFET-1T/2FeFET-2T TCAM design consumes 3.03X/8.08X less search energy than the conventional 16T CMOS TCAM, while the proposed design cell area is only 32.1%/39.3% of the latter. Compared with the state-of-the-art 2FeFET only TCAM array, our proposed designs still achieve 1.79X and 4.79X search energy reduction, respectively. Moreover, our proposed designs can achieve, on average, 45.2%/51.5% energy saving compared with the conventional GPU based architecture at the application level.

A Novel High-Density and Low-Power Ternary Content Addressable Memory Design Based on 3D NAND Flash

Energy-Aware Designs of Ferroelectric Ternary Content Addressable Memory.

An ultra-high-density and energy-efficient content addressable memory design based on 3D-NAND flash

Computational Associative Memory with Amorphous Metal‐Oxide Channel 3D NAND‐Compatible Floating‐Gate Transistors (adv. Electron. Mater. 12/2022)

Computational Associative Memory with Amorphous Metal‐Oxide Channel 3D NAND‐Compatible Floating‐Gate Transistors

Ferroelectric Ternary Content Addressable Memories for Energy-Efficient Associative Search.

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An Energy Efficient Floating Point Computing Infrastructure Embedding Ferroelectric Field Effect Transistor Based Ternary Content Addressable Memories

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A Scalable Design of Multi-Bit Ferroelectric Content Addressable Memory for Data-Centric Computing

A novel ternary content addressable memory design based on resistive random access memory with high intensity and low search energy

Analog Content Addressable Memory using Ferroelectric: A Case Study of Search-in-Memory

Energy Efficient Data Search Design and Optimization Based on a Compact Ferroelectric FET Content Addressable Memory

Dynamic Ternary Content-Addressable Memory is Indeed Promising: Design and Benchmarking Using Nanoelectromechanical Relays.

Design Exploration of Dynamic Multi-Level Ternary Content-Addressable Memory Using Nanoelectromechanical Relays

Multibit Content Addressable Memory Design and Optimization Based on 3-D nand-Compatible IGZO Flash

A High-Speed Robust NVM-TCAM Design Using Body Bias Feedback

DyTAN: Dynamic Ternary Content Addressable Memory Using Nanoelectromechanical Relays.

Energy-efficient Ternary Content Addressable Memory Using Ferroelectric FET

A 5T-2MTJ STT-assisted Spin Orbit Torque based Ternary Content Addressable Memory for Hardware Accelerators