Abstract:Artificial intelligence has made remarkable advancements in recent years, leading to the development of algorithms and models capable of handling ever-increasing amounts of data. The computational demands of these algorithms necessitate circuit and architecture designs that go beyond the von-Neumann paradigm. Content addressable memories (CAMs), which implement parallel associative search functionality within memory blocks to overcome the memory wall bottleneck, have proven to be effective for data-intensive tasks. While current CAM designs have achieved higher storage density and energy efficiency than their CMOS-based counterparts by leveraging emerging non-volatile memories (NVM), most of these implementations are limited to binary storage cells. In this work, we propose SEE-MCAM, scalable and compact multi-bit CAM (MCAM) designs that utilize the three-terminal ferroelectric FET (FeFET) as the proxy. By exploiting the multi-level-cell characteristics of FeFETs, our proposed SEE-MCAM designs enable multi-bit associative search functions and achieve better energy efficiency and performance than existing FeFET-based CAM designs. We validated the functionality of our proposed designs by achieving 3 bits per cell CAM functionality, resulting in 3x improvement in storage density. The area per bit of the proposed SEE-MCAM cell is 8% of the conventional CMOS CAM. We thoroughly investigated the scalability and robustness of the proposed design. Evaluation results suggest that the proposed 2FeFET-1T SEE-MCAM achieves 9.8x more energy efficiency and 1.6x less search latency compared to the CMOS CAM, respectively. When compared to existing MCAM designs, the proposed SEE-MCAM can achieve 8.7x and 4.9x more energy efficiency than ReRAM-based and FeFET-based MCAMs, respectively. Benchmarking results show that our approach provides up to 3 orders of magnitude improvement in speedup and energy efficiency over a GPU implementation in accelerating a novel quantized hyperdimensional computing (HDC) application.

Computational Associative Memory Based on Monolithically Integrated Metal-Oxide Thin Film Transistors for Update-Frequent Search Applications

Ferroelectric Ternary Content Addressable Memories for Energy-Efficient Associative Search.

Computational Associative Memory with Amorphous Metal‐Oxide Channel 3D NAND‐Compatible Floating‐Gate Transistors (adv. Electron. Mater. 12/2022)

Energy-Aware Designs of Ferroelectric Ternary Content Addressable Memory.

Design of Ultracompact Content Addressable Memory Exploiting 1T-1MTJ Cell

An Ultracompact Single-Ferroelectric Field-Effect Transistor Binary and Multibit Associative Search Engine

Computational Associative Memory with Amorphous Metal‐Oxide Channel 3D NAND‐Compatible Floating‐Gate Transistors

A Scalable 2T-1Fefet Based Content Addressable Memory Design for Energy Efficient Data Search

An Energy Efficient Floating Point Computing Infrastructure Embedding Ferroelectric Field Effect Transistor Based Ternary Content Addressable Memories

Analog Content Addressable Memory using Ferroelectric: A Case Study of Search-in-Memory

A Scalable Design of Multi-Bit Ferroelectric Content Addressable Memory for Data-Centric Computing

An Ultra-Compact Single FeFET Binary and Multi-Bit Associative Search Engine

SEE-MCAM: Scalable Multi-bit FeFET Content Addressable Memories for Energy Efficient Associative Search

Energy Efficient Data Search Design and Optimization Based on a Compact Ferroelectric FET Content Addressable Memory

On the Reliability of In-Memory Computing: Impact of Temperature on Ferroelectric TCAM.

A FeFET-based Time-Domain Associative Memory for Multi-bit Similarity Computation

Single-Ferroelectric FET based Associative Memory for Data-Intensive Pattern Matching.

Ternary Content-Addressable Memory Based on a Single Two-Dimensional Transistor for Memory-Augmented Learning

Design and Benchmarking of Ferroelectric FET Based TCAM.

A novel ternary content addressable memory design based on resistive random access memory with high intensity and low search energy