Abstract:Increasing the storage density of phase-change memory is a challenging subject towards the universal memory commercialization. Multi-level data storage can be implemented in phase-change memory cells by designing multiple stages of crystallization of phase-change materials, which is favorable to push forward the application of phase-change memory in storage-class memory and the emerging in-memory computing. Here, the structure and properties of In 2 Se 3 phase-change thin films with multi-level phase transitions are investigated. The In 2 Se 3 thin films changes resistance states twice upon heating with high crystallization temperature and good thermal stability. The amorphous In 2 Se 3 thin films undergo partial crystallization of the Se phase followed by crystallization of the γ-In 2 Se 3 phase, with successive stages of crystallization accounting for the three distinct levels of resistivity. The phase-change memory cell based on In 2 Se 3 thin films shows a continuous switching process of high resistance state, intermediate resistance state and low resistance state with low drift coefficient in SET-RESET operations at a speed as fast as 60 ns, and the RESET power is as low as 311 pJ, indicating that the In 2 Se 3 thin films have good performance of three-state storage property and can effectively improve the memory density.

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