Abstract:Ge-Sb-Te-based phase change memory alloys have recently attracted a lot of attention due to their promising applications in the fields of photonics, non-volatile data storage, and neuromorphic computing. Of particular interest is the understanding of the structural changes and underlying mechanisms induced by short optical pulses. This work reports on structural changes induced by single nanosecond UV laser pulses in amorphous and epitaxial Ge2Sb2Te5 (GST) thin films. The phase changes within the thin films are studied by a combined approach using X-ray diffraction and transmission electron microscopy. The results reveal different phase transitions such as crystalline-to-amorphous phase changes, interface assisted crystallization of the cubic GST phase and structural transformations within crystalline phases. In particular, it is found that crystalline interfaces serve as crystallization templates for epitaxial formation of metastable cubic GST phase upon phase transitions. By varying the laser fluence, GST thin films consisting of multiple phases and different amorphous to crystalline volume ratios can be achieved in this approach, offering a possibility of multilevel data storage and realization of memory devices with very low resistance drift. In addition, this work demonstrates amorphization and crystallization of GST thin films by using only one UV laser with one single pulse duration and one wavelength. Overall, the presented results offer new perspectives on switching pathways in Ge-Sb-Te-based materials and show the potential of epitaxial Ge-Sb-Te thin films for applications in advanced phase change memory concepts.

Characterization of Ge2Sb2Te5 Thin Film Transistor and Its Application in Non-Volatile Memory

Electronic Properties of GST for Non-Volatile Memory

The Relationship between Electron Transport and Microstructure in Ge2Sb2Te5 Alloy

Study of Ge2sb2te5 Film for Nonvolatile Memory Medium

Nitrogen-doped Ge 2 Sb 2 Te 5 films for nonvolatile memory

Nitrogen-doped Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> films for nonvolatile memory

The Performance of Ge2Sb2Te5 Material and Nonvolatile Phase-Change-memory Device

Effects of Germanium and Nitrogen Incorporation on Crystallization of N-Doped Ge2+Xsb2te5 (X=0,1) Thin Films for Phase-Change Memory

The Performance Of Ge2sb2te5 Material For Pcram Device

Nano-crystalline phase change memory with composite Si-Sb-Te film for better data retention and lower operation current

Multi-Bit Storage Based on Chalcogenide Thin Film Transistor for High Density Nonvolatile Memory Application

THE PERFORMANCE OF Ge 2 Sb 2 Te 5 MATERIAL FOR PCRAM DEVICE

Enhanced Threshold Voltage of Zn-doped Ge2Sb2Te5phase-change Memory Deposited by Electron-Beam Evaporation

Characteristics of phase transition in boron-implanted Ge<sub>2</sub> Sb<sub>2</sub> Te<sub>5</sub> thin films for phase change memory applications

Si Doping in Ge2Sb2Te5 Film to Reduce the Writing Current of Phase Change Memory

Crystallization behavior of MnTe/GeTe stacked thin films for multi-level phase change memory

In situ atomic-scale observation of transformation from disordered to ordered layered structures in Ge-Sb-Te phase change memory thin films

High-performance Amorphous In-Ga-Zn-O Thin-Film Transistor Nonvolatile Memory with a Novel P-Sno/n-sno2 Heterojunction Charge Trapping Stack

Outstanding phase-change behaviors of GaGeSbTe material for phase-change memory application

Structural Transitions in Ge2Sb2Te5 Phase Change Memory Thin Films Induced by Nanosecond UV Optical Pulses

A Nano-Scale-Sized 3d Element for Phase Change Memories