Abstract:Abstract Miniaturized nonvolatile reconfigurable optical components with a subwavelength thickness, extremely compact size, high-speed response, and low power consumption will be the core of next-generation all-optical integrated devices and photonic computing to replace traditional bulky optical devices and integrated circuits, which are reaching physical limitations of Moore’s law. Metasurfaces, as ultrathin planar surfaces, have played a major role in controlling the amplitude, phase, and polarization of electromagnetic waves and can be combined with various active modulation methods to realize a variety of functional devices. However, most existing reconfigurable devices are bounded in volatile nature with constant power to maintain and single functionality, which restricts their further extensive applications. Chalcogenide phase change materials (PCM) have attracted considerable attention due to their unique optical properties in the visible and infrared domains, whereas in the terahertz (THz) regime, research on the reversible phase transition in large-scale areas and applications of Ge 2 Sb 2 Te 5 (GST) are still under exploration. Here, we achieved reversible, repeated, and large-area switching of GST with the help of optical and thermal stimuli. Large-area amorphization with a 1 cm diameter of GST is realized by using a single laser pulse. Then, we incorporate GST into metasurface designs to realize nonvolatile, reconfigurable, multilevel, and broadband terahertz modulators, including the anomalous deflector, metalens, and focusing optical vortex (FOV) generator. Experimental results verify the feasibility of multilevel modulation of THz waves in a broadband frequency range. Moreover, the modulators are reusable and nonvolatile. The proposed approach presents novel avenues of nonvolatile and reconfigurable metasurface designs and can enable wide potential applications in imaging, sensing, and high-speed communications.

Terahertz multi-level nonvolatile optically rewritable encryption memory based on chalcogenide phase-change materials

Reconfigurable and Nonvolatile Terahertz Metadevices Based on a Phase-Change Material

Photonic non-volatile memories using phase change materials

Sb7te3/Ge Multilayer Films for Low Power and High Speed Phase-Change Memory

Terahertz Read-Only Multi-Order Nonvolatile Rewritable Photo-Memory Based on Indium Oxide Nanoparticles

Non-volatile Multi-Level Cell Storage Via Sequential Phase Transition in Sb7Te3/GeSb6Te Multilayer Thin Film

Ultrafast optical manipulation of atomic arrangements in chalcogenide alloy memory materials

Ultrafast SET/RESET Operation for Optoelectronic Hybrid Phase-Change Memory Device Cells Based on Ge2Sb2Te5 Material Using Partial Crystallization Strategy

Multilevel optoelectronic hybrid memory based on N-doped Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> film with low resistance drift and ultrafast speed

Thermal stability and high speed for optoelectronic hybrid phase-change memory based on Cr doped Ge2Sb2Te5 thin film

Sb 7 Te 3 /znsb Multilayer Thin Films for High Thermal Stability and Long Data Retention Phase-Change Memory

Cr7Ge33Te60/Hf16Ge6Sb78 Superlattice‐Like Thin Film with Triple‐Phase Transitions for Multilevel Phase‐Change Memory

Multi-State Data Storage of Ge2sb2te5/Ga30sb70 Multilayer Films for Phase Change Memory

CHF 3 /O 2 -Based Plasma Reactive Ion Etching of GeTe for Nonvolatile Phase Change Memory

Investigation of GeTe/Ge2Sb2Te5 Nanocomposite Multilayer Films for Phase-Change Memory Applications

Structural Transitions in Ge2Sb2Te5 Phase Change Memory Thin Films Induced by Nanosecond UV Optical Pulses

Neuromorphic Photonic Memory Devices Using Ultrafast, Non‐volatile Phase‐change Materials

Volatile and Nonvolatile Switching of Phase Change Material Ge2Sb2Te5 Revealed by Time-Resolved Terahertz Spectroscopy

Nonvolatile reconfigurable terahertz wave modulator

A Review of Germanium-Antimony-Telluride Phase Change Materials for Non-Volatile Memories and Optical Modulators

Multi-level Storage and Ultra-High Speed of Superlattice-Like Ge50Te50/Ge8Sb92 Thin Film for Phase-Change Memory Application