Abstract:A multi‐functional platform is fabricated entirely from 2D ferroelectric semiconductor α‐In2Se3 integrated with three functions: i) Highly distinguishable optoelectronic demodulation; ii) Reconfigurable non‐volatile optoelectronic logic gates; iii) Visual information preprocessing with gate voltage modulation. The platform can respond to the lights in visible to infrared (up to 1800 nm) range. The optical‐engineered ferroelectric polarization switch behavior is observed. 2D layered semiconductors with excellent light−matter interaction and atomic‐scale thickness have been envisioned as promising candidates for more than Moore and beyond Moore technologies. Here, for the first time, a multi‐functional platform is reported that is fabricated entirely from wrinkle‐free 2D ferroelectric semiconductor α‐In2Se3 integrated with a photodetector, reconfigurable logic switching, and visual perception processing functions. The intensity‐ and wavelength‐dependent resistance is used to demodulate broadband optical information into electrical signals and perform reconfigurable logic switching. Moreover, the platform offers dynamically modulated photosensitive visual sensing in different working modes at the pixel level. Using photo‐assisted piezoresponse force microscopy, the optical‐engineered ferroelectric polarization switch behavior is explored. The platform has excellent sensitivity to both optical and electrical stimuli and can respond to lights in the visible to short‐wavelength infrared region in volatile/non‐volatile manner under gate voltage modulation, with a response of 98 mA W−1 (to 1800 nm light), a current on/off ratio of over 106, and a high field‐effect mobility of 137.55 cm2 V−1 s−1. With its simple structure, unique photoelectric interaction, and controllable operating mechanism, the platform has the potential to simplify the complexity of neuromorphic computing circuitry systems, paving the way for high‐performance hybrid technologies suitable for artificial intelligence applications.

Logic and in-memory computing achieved in a single ferroelectric semiconductor transistor

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Nonvolatile Ferroelectric Field-Effect Transistors.

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Logic-in-memory based on an atomically thin semiconductor

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Ferroelectric‐Nanocrack Switches for Memory and Complementary Logic with Zero Off‐current and Low Operating Voltage

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Ferroelectrics: Nonvolatile Ferroelectric Memory Effect in Ultrathin α‐In <sub>2</sub> Se <sub>3</sub> (Adv. Funct. Mater. 20/2019)