Abstract:The growing importance of applications based on machine learning is driving the need to develop dedicated, energy-efficient electronic hardware. Compared with von Neumann architectures, which have separate processing and storage units, brain-inspired in-memory computing uses the same basic device structure for logic operations and data storage<a href="#ref-CR1">1</a>,<a href="#ref-CR2">2</a>,<a href="/articles/s41586-020-2861-0#ref-CR3">3</a>, thus promising to reduce the energy cost of data-centred computing substantially<a href="/articles/s41586-020-2861-0#ref-CR4">4</a>. Although there is ample research focused on exploring new device architectures, the engineering of material platforms suitable for such device designs remains a challenge. Two-dimensional materials<a href="/articles/s41586-020-2861-0#ref-CR5">5</a>,<a href="/articles/s41586-020-2861-0#ref-CR6">6</a> such as semiconducting molybdenum disulphide, MoS2, could be promising candidates for such platforms thanks to their exceptional electrical and mechanical properties<a href="#ref-CR7">7</a>,<a href="#ref-CR8">8</a>,<a href="/articles/s41586-020-2861-0#ref-CR9">9</a>. Here we report our exploration of large-area MoS2 as an active channel material for developing logic-in-memory devices and circuits based on floating-gate field-effect transistors (FGFETs). The conductance of our FGFETs can be precisely and continuously tuned, allowing us to use them as building blocks for reconfigurable logic circuits in which logic operations can be directly performed using the memory elements. After demonstrating a programmable NOR gate, we show that this design can be simply extended to implement more complex programmable logic and a functionally complete set of operations. Our findings highlight the potential of atomically thin semiconductors for the development of next-generation low-power electronics.

Two-Dimensional Tunneling Memtransistor with Thin-Film Heterostructure for Low-Power Logic-in-Memory Complementary Metal-Oxide Semiconductor

2D TMD Channel Transistors with ZnO Nanowire Gate for Extended Nonvolatile Memory Applications

Modifying the Power and Performance of 2-Dimensional MoS 2 Field Effect Transistors

Two dimensional semiconducting materials for ultimately scaled transistors

Small footprint transistor architecture for photoswitching logic and in situ memory

Pass‐transistor Logic Circuits Based on Wafer‐Scale Two‐Dimensional Semiconductors

A Non-Volatile AND Gate Based on Al2O3/HfO2/Al2O3 Charge-Trap Stack for In-Situ Storage Applications

Reconfigurable Logic-in-Memory Computing Based on a Polarity-Controllable Two-Dimensional Transistor.

Multibit Non-Volatile Memory Based on WS2 Transistor with Engineered Gate Stack

2D Short‐Channel Tunneling Transistor Relying on Dual‐Gate Modulation for Integrated Circuits Application

A Symmetric Tunnel Field-Effect Transistor Based on MoS2/Black Phosphorus/MoS2 Nanolayered Heterostructures

Dual-Ferroelectric-Coupling-Engineered Two-Dimensional Transistors for Multifunctional In-Memory Computing

A High-Density Memory Design Based on Self-Aligned Tunneling Window for Large-Capacity Memory Application

Direct Integration of Ferroelectric Hafnium Zirconium Oxide as Top-Gate High−κ Dielectrics for Two-Dimensional Transistors

Atomically Thin Van Der Waals Tunnel Field-Effect Transistors and Its Potential for Applications

Logic-in-memory based on an atomically thin semiconductor

Low-Power Memristor Based on Two-Dimensional Materials

Reconfigurable Tunneling Transistors Heterostructured by an Individual Carbon Nanotube and MoS2

Reducing the power consumption of two-dimensional logic transistors

Mechano-Driven Logic-in-Memory with Neuromorphic Triboelectric Charge-Trapping Transistor

Resistive Memory Devices at the Thinnest Limit: Progress and Challenges