Abstract:Two-dimensional (2D) transition metal dichalcogenides (TMDs) allow for atomic-scale manipulation, challenging the conventional limitations of semiconductor materials. This capability may overcome the short-channel effect, sparking significant advancements in electronic devices that utilize 2D TMDs. Exploring the dimension and performance limits of transistors based on 2D TMDs has gained substantial importance. This review provides a comprehensive investigation into these limits of the single 2D-TMD transistor. It delves into the impacts of miniaturization, including the reduction of channel length, gate length, source/drain contact length, and dielectric thickness on transistor operation and performance. In addition, this review provides a detailed analysis of performance parameters such as source/drain contact resistance, subthreshold swing, hysteresis loop, carrier mobility, on/off ratio, and the development of p-type and single logic transistors. This review details the two logical expressions of the single 2D-TMD logic transistor, including current and voltage. It also emphasizes the role of 2D TMD-based transistors as memory devices, focusing on enhancing memory operation speed, endurance, data retention, and extinction ratio, as well as reducing energy consumption in memory devices functioning as artificial synapses. This review demonstrates the two calculating methods for dynamic energy consumption of 2D synaptic devices. This review not only summarizes the current state of the art in this field but also highlights potential future research directions and applications. It underscores the anticipated challenges, opportunities, and potential solutions in navigating the dimension and performance boundaries of 2D transistors.

Reducing the power consumption of two-dimensional logic transistors

Modifying the Power and Performance of 2-Dimensional MoS 2 Field Effect Transistors

Performance Limits and Advancements in Single 2D Transition Metal Dichalcogenide Transistor

Atomic Threshold-Switching Enabled MoS2 Transistors Towards Ultralow-Power Electronics

Low-power MoS2 metal–semiconductor field effect transistors (MESFETs) based on standard metal–semiconductor contact

Low Voltage Organic Thin-Film Transistor with Reduced Sub-Gap Dos for Power Efficient Logic Circuits

TMD material investigation for a low hysteresis vdW NCFET logic transistor

Energy-efficient transistors: suppressing the subthreshold swing below the physical limit

Promising Ultra-Short Channel Transistors Based on OM2S (M = Ga, In) Monolayers for High Performance and Low Power Consumption

Strengthened Complementary Metal-Oxide-Semiconductor Logic for Small-Band-Gap Semiconductor-Based High-Performance and Low-Power Application

Computational study of transition metal dichalcogenide cold source MOSFETs with sub-60 mV per decade and negative differential resistance effect

Ultra-Low-Power and Performance-Improved Logic Circuit Using Hybrid TFET-MOSFET Standard Cells Topologies and Optimized Digital Front-End Process

Transistors and logic circuits enabled by 2D transition metal dichalcogenides: A state-of-the-art survey

Logical Integration Device for Two-Dimensional Semiconductor Transition Metal Sulfide

Van der Waals negative capacitance transistors

Cascaded Logic Gates Based on High-Performance Ambipolar Dual-Gate WSe2 Thin Film Transistors

A perspective on the doping of transition metal dichalcogenides for ultra-scaled transistors: Challenges and opportunities

Process integration and future outlook of 2D transistors

The Trend of 2D Transistors toward Integrated Circuits: Scaling Down and New Mechanisms (Adv. Mater. 48/2022)

A next-generation transistor with low supply voltage operation constructed based on 2D materials' metal-semiconductor phase transition

Two dimensional semiconducting materials for ultimately scaled transistors