Abstract:Electrothermal performance of Resistive Random Access Memory (RRAM) composed of five different resistive switching oxides is studied numerically in this paper. Finite element method-based parallel computing simulator is employed to conduct the electrothermal simulation of both RRAM cell and array. Simulation results indicate that NiO and ZrO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> RRAMs generate higher heat than HfO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> , TiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> and ZnO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> RRAMs, as their electric conductivity are higher in the same voltage. During the reset, ZnO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> RRAM requires lower voltage to be transferred into high-resistance state due to its higher oxygen vacancy drift rate. The heat crosstalk problem in RRAM array is also investigated, which can decrease reliability during the reset of RRAM. Inactive cells can be transferred into high-resistance state unintentionally with stored information lost. In the same voltage, both HfO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> and TiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> RRAMs are less affected by heat crosstalk due to their lower oxygen vacancy drift rate.

Asymmetric Resistive Switching Processes in W:Alox/Woy Bilayer Devices

Study of redox reactions in resistive switching processes of AlO x /WO y based bilayer RRAM

The W Oxidation Time Effect on Resistive Switching Speed in AlOx/WOx-based RRAM

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

Modulation Effect of Reducing Time on Switching Speed in AlOx/WOx RRAM

Study of Conduction and Switching Mechanisms in Al/Alox/Wox/W Resistive Switching Memory for Multilevel Applications

Effects of Interface Reaction on the Performance of Alox/Wox Bilayer Resistive Switching Memory

Resisitive Switching Variability Study on 1T1R AlOx/WOx-based RRAM Array

High-density WOx-based RRAM with a W-doped AlOx insertion layer

Resistive Switching Behavior of Solution-Processed AlOx, based RRAM with Ni and TiN Top Electrode at Low Annealing Temperatures

Self-compliance Multilevel Resistive Switching Characteristics in TiN/HfOx/Al/Pt RRAM Devices

Multilevel Set/Reset Switching Characteristics in Al/Ceox/Pt Rram Devices

Occurrence of Resistive Switching and Threshold Switching in Atomic Layer Deposited Ultrathin (2 nm) Aluminium Oxide Crossbar Resistive Random Access Memory

Nonvolatile Bipolar Resistive Switching Characteristics of Aluminum Oxide Grown by Thermal Oxidation Processes

Low Reset Current in Stacked $\hbox{alo}_{x}/ \hbox{wo}_{x}$ Resistive Switching Memory

Sub-nanosecond Pulse Programming and Device Design Strategy for Analog Resistive Switching in HfOx-based Resistive Random Access Memory

Electrode-Induced Digital-To-Analog Resistive Switching in Taox-Based Rram Devices

Investigation of Resistive Switching in Bipolar Taox-Based Resistive Random Access Memory

Fast Step-Down Set Algorithm of Resistive Switching Memory with Low Programming Energy and Significant Reliability Improvement

Oxygen-ion-migration-modulated Bipolar Resistive Switching and Complementary Resistive Switching in Tungsten/indium Tin Oxide/gold Memory Device

Investigation of Resistive Switching Mechanisms in Ti/TiO<i><sub>x</sub></i>/Pd-Based RRAM Devices