A Novel Operation Scheme for Oxide-Based Resistive-Switching Memory Devices to Achieve Controlled Switching Behaviors

B. Chen,B. Gao,S. W. Sheng,L. F. Liu,X. Y. Liu,Y. S. Chen,Y. Wang,R. Q. Han,B. Yu,J. F. Kang

DOI: https://doi.org/10.1109/led.2010.2101577

IF: 4.8157

2011-01-01

IEEE Electron Device Letters

Abstract:A new operation scheme on oxide-based resistive-switching devices [resistive random access memory (RRAM)] is proposed to improve the controllability of switching processes in order to achieve an improved memory performance. The improved device-to-device and cycle-to-cycle uniformity, reduced RESET current, and adjustable R-HRS/R-LRS ratio are demonstrated in the HfOx-based RRAM devices by using the new operation scheme, indicating the validity of the new operation scheme. The physical mechanism accounting for the new operation scheme effect is discussed.