Abstract:HfO2-based resistive random-access memory (RRAM) with a Ti buffer layer has been extensively studied as an emerging nonvolatile memory (eNVM) candidate because of its excellent resistive switching (RS) properties and CMOS process compatibility. However, a detailed understanding of the nature of Ti thickness-dependent RS and systematic thermal degradation research about the effect of post-metallization annealing (PMA) time on oxygen vacancy distribution and RS performance still needs to be included. Herein, the impact of Ti buffer layer thickness on the RS performance of the Al/Ti/HfO2/TiN devices is first addressed. Consequently, we have proposed a simple strategy to regulate the leakage current, forming voltage, memory window, and uniformity by varying the thickness of the Ti layer. Moreover, it is found that the device with 15 nm Ti shows the minimum cycle-to-cycle variability (CCV) and device-to-device variability (DDV), good retention (105 s at 85 °C), and superior endurance (104). In addition, thermal degradation of the Al/Ti(15 nm)/HfO2/TiN devices under different PMA times at 400 °C is carried out. It is found that the leakage current increases and the forming voltage and memory window decrease with the increase in PMA time due to the thermally activated oxidation of the Ti. However, when the PMA time increases to 30 min, the Ti can no longer capture oxygen from HfO2 due to the formation of self-limited TiOx. Therefore, the device shows superior thermal stability with a PMA time of 90 min at 400 °C and no degradation of the memory window, uniformity, endurance, or retention. This work demonstrates that the Ti/HfO2-based RRAM shows superior back-end-of-line compatibility with high thermal stability up to 400 °C for over an hour.

Relaxation Effect in RRAM Arrays: Demonstration and Characteristics

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

Suppression of Relaxation Effect in HfO2 Resistive Random Access Memory Array by Improved Program Operations

The Statistical Evaluation of Correlations Between LRS and HRS Relaxations in RRAM Array

Ti/HfO2-Based RRAM with Superior Thermal Stability Based on Self-Limited TiOx

Fully Coupled Electrothermal Simulation of Resistive Random Access Memory (RRAM) Array

Impact and Quantization of Short-Term Relaxation Effect in Analog RRAM

Insight into Effects of Oxygen Reservoir Layer and Operation Schemes on Data Retention of HfO2-Based RRAM

Study on High-Resistance State Instability of TaOx-Based RRAM

Investigation of LRS Dependence on the Retention of HRS in CBRAM

The Impact of Thermal Enhance Layers on the Relaxation Effect in Analog RRAM

HfO2/Al2O3 multilayer for RRAM arrays: a technique to improve tail-bit retention.

Thermal Stability of HfO X -Based Resistive Memory Array: A Temperature Coefficient Study

Investigation on the RESET Switching Mechanism of Bipolar Cu/HfO2/Pt RRAM Devices with a Statistical Methodology

Optimization of TiN/TaOx/HfO2/TiN RRAM Arrays for Improved Switching and Data Retention

Oxide-based RRAM: Physical based retention projection

Random Telegraph Noise Analysis In Alox/Woy Resistive Switching Memories

A Fully Digital Relaxation-Aware Analog Programming Technique for HfOx RRAM Arrays

Investigation on High Resistance Variation of Bi-layer TaO<inf>x</inf>/HfO<inf>2</inf> RRAM Devices

Operando diagnostic detection of interfacial oxygen ‘breathing’ of resistive random access memory by bulk-sensitive hard X-ray photoelectron spectroscopy

Investigation on High Resistance Variation of Bi-layer TaO<sub>x</sub>/HfO<sub>2</sub> RRAM Devices