Abstract:Oxide based RRAM memories are considered as potential candidates to replace floating gate memory devices [1-2] due to their proven low power operation , high switching speed [3] and compatibility with conventional CMOS back-end-of-line process. The working principle relies on the reversible change of the oxide layer’s resistance between two levels namely HRS (High Resistance State) and LRS (Low Resistance State). This resistance change has been widely attributed to the creation/reconstruction and rupture of a localized or multiple conductive filaments (CF) in the oxide layer. Various companies [4] and research laboratories [5] have adopted the HfOx solution as the active oxide layer that casts the memory effect. However, the process of the CF creation responsible for resistive switching and the oxide layer degradation are yet to be fully explored. In this paper we use first principles calculations to investigate Frenkel-Pair formation (FP) in HfO2 that play an important role in the CF creation. Depending on the electrode nature, its work function and reactivity with oxygen, we bring more insight into the FP formation leading to CF creation and device reliability. We show that oxygen active electrodes with low work function, like Ti, improve device reliability. Finally, endurance tests on a memory cell with Ti as top electrode were performed to assess cycling stability. Endurance up to 108 cycles, with optimized set conditions has been demonstrated. [1] H. Akinaga and H. Shima, Proc. IEEE, vol. 98, p. 2237, 2010.[2] V. Sriraman et al., IPCSIT, vol. 32, p.101, 2012 [3] B. Govoreanu et al., IEDM Tech. Dig., pp. 729-732, 2011 [4] Ch. Walczyk et al., J. Vac. Sci. Technol. B 29, 01AD02 (2011) [5] Y.S.Chen et al., IEDM Tech. Dig,pp. 31.3.1 - 31.3.4,2011.

Insight into Effects of Oxygen Reservoir Layer and Operation Schemes on Data Retention of HfO2-Based RRAM

Ti/HfO2-Based RRAM with Superior Thermal Stability Based on Self-Limited TiOx

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

First Principle Simulations on the Effects of Oxygen Vacancy in HfO2-based RRAM

Thermal Stability and Data Retention of Resistive Random Access Memory with Hfox/Zno Double Layers

Modeling and Simulation of Hafnium Oxide RRAM Based on Oxygen Vacancy Conduction

Oxide-based RRAM: Physical based retention projection

Relaxation Effect in RRAM Arrays: Demonstration and Characteristics

Statistical Analysis Of Retention Behavior And Lifetime Prediction Of Hfox-Based Rram

Investigation of Frenkel-Pair Formation in HfO2 and Its Influence on OxRAM Memory Reliability

HfO2/Al2O3 multilayer for RRAM arrays: a technique to improve tail-bit retention.

Experimental investigation of the reliability issue of RRAM based on high resistance state conduction.

HfO2-Based RRAM with in Situ Conductive Channels Induced by Nanoparticles to Improve Stability

Research on Single Event Effect Test of a RRAM Memory and Space Flight Demonstration

Suppression of Relaxation Effect in HfO2 Resistive Random Access Memory Array by Improved Program Operations

Optimization of the Forming Process of HfOx-Based RRAM to Achieve Bidirectional Forming and Enhanced Switching Performance by Inserting an Oxygen-Vacancy-Rich Layer

Interface Characteristic and Performance Optimization Mechanism for HfOr-based RRAM Devices

Operando diagnostic detection of interfacial oxygen ‘breathing’ of resistive random access memory by bulk-sensitive hard X-ray photoelectron spectroscopy

Oxygen vacancy effects in HfO2-based resistive switching memory: First principle study

Characterization of Oxygen Accumulation in Indium-Tin-Oxide for Resistance Random Access Memory

(Invited) Investigation of Frenkel-Pair Formation in HfO2 and Its Influence on OxRAM Memory Reliability