Abstract:Oxide based RRAM memories are considered as potential candidates to replace floating gate memory devices [1-2] due to their proven low power operation , high switching speed [3] and compatibility with conventional CMOS back-end-of-line process. The working principle relies on the reversible change of the oxide layer’s resistance between two levels namely HRS (High Resistance State) and LRS (Low Resistance State). This resistance change has been widely attributed to the creation/reconstruction and rupture of a localized or multiple conductive filaments (CF) in the oxide layer. Various companies [4] and research laboratories [5] have adopted the HfOx solution as the active oxide layer that casts the memory effect. However, the process of the CF creation responsible for resistive switching and the oxide layer degradation are yet to be fully explored. In this paper we use first principles calculations to investigate Frenkel-Pair formation (FP) in HfO2 that play an important role in the CF creation. Depending on the electrode nature, its work function and reactivity with oxygen, we bring more insight into the FP formation leading to CF creation and device reliability. We show that oxygen active electrodes with low work function, like Ti, improve device reliability. Finally, endurance tests on a memory cell with Ti as top electrode were performed to assess cycling stability. Endurance up to 108 cycles, with optimized set conditions has been demonstrated. [1] H. Akinaga and H. Shima, Proc. IEEE, vol. 98, p. 2237, 2010.[2] V. Sriraman et al., IPCSIT, vol. 32, p.101, 2012 [3] B. Govoreanu et al., IEDM Tech. Dig., pp. 729-732, 2011 [4] Ch. Walczyk et al., J. Vac. Sci. Technol. B 29, 01AD02 (2011) [5] Y.S.Chen et al., IEDM Tech. Dig,pp. 31.3.1 - 31.3.4,2011.

A Probe of Reliability Issues of Oxide Electrolyte Based CBRAM

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

Evolution of Conductive Filament and Its Impact on Reliability Issues in Oxide-Electrolyte Based Resistive Random Access Memory

A Physics-Based Compact Model for CBRAM Retention Behaviors Based on Atom Transport Dynamics and Percolation Theory

Methodology for Stability Evaluation on the Multi-Level Storages of Oxide-Based Conductive Bridge Ram (Cbram)

Investigation of LRS Dependence on the Retention of HRS in CBRAM

Improvement of Device Reliability by Introducing a BEOL-Compatible TiN Barrier Layer in CBRAM

Performance Improvement of Conductive Bridging Random Access Memory by Electrode Alloying

Experimental investigation of the reliability issue of RRAM based on high resistance state conduction.

Electrical and testing reliability of CuxO based RRAM

HfOx Bipolar Resistive Memory with Robust Endurance Using ZrNx As Buttom Electrode

Kinetic Monte Carlo Simulations on Electroforming in Nanomanipulated Conductive Bridge Random Access Memory Devices

Investigation of Frenkel-Pair Formation in HfO2 and Its Influence on OxRAM Memory Reliability

Conduction mechanisms, dynamics and stability in ReRAMs

Complementary Resistive Switching Behavior for Conductive Bridge Random Access Memory

In-situ Observation of Cu Filaments Evolution in SiO2 Layer

Real-Time Observation of the Electrode-Size-Dependent Evolution Dynamics of the Conducting Filaments in a SiO2 Layer

Probing Resistive Switching in HfO2/Al2O3 Bilayer Oxides Using In-Situ Transmission Electron Microscopy

Superior Retention of Low-Resistance State in Conductive Bridge Random Access Memory with Single Filament Formation

Design and Analysis of Crossbar Architecture Based on Complementary Resistive Switching Non-Volatile Memory Cells.

Two-Dimensional (2D) Materials-Inserted Conductive Bridge Random Access Memory: Controllable Injection of Cations in Vertical Stacking Alignment of MoSe 2 Layers Prepared by Plasma-Assisted Chemical Vapor Reaction