Abstract:We present a review and primer on the subject of conductive bridging random access memory (CBRAM), a metal ion-based resistive switching technology, in the context of current research and the near-term requirements of the electronics industry in ultra-low energy devices and new computing paradigms. We include extensive discussions of the materials involved, the underlying physics and electrochemistry, the critical roles of ion transport and electrode reactions in conducting filament formation and device switching, and the electrical characteristics of the devices. Two general cation material systems are given—a fast ion chacogenide electrolyte and a lower ion mobility oxide ion conductor, and numerical examples are offered to enhance understanding of the operation of devices based on these. The effect of device conditioning on the activation energy for ion transport and consequent switching speed is discussed, as well as the mechanisms involved in the removal of the conducting bridge. The morphology of the filament and how this could be influenced by the solid electrolyte structure is described, and the electrical characteristics of filaments with atomic-scale constrictions are discussed. Consideration is also given to the thermal and mechanical environments within the devices. Finite element and compact modelling illustrations are given and aspects of CBRAM storage elements in memory circuits and arrays are included. Considerable emphasis is placed on the effects of ionizing radiation on CBRAM since this is important in various high reliability applications, and the potential uses of the devices in reconfigurable logic and neuromorphic systems is also discussed.

Cluster-Type Filaments Induced by Doping in Low-Operation-Current Conductive Bridge Random Access Memory

Resistive switching in Nb-doped SrZrO3 memory films: An effective approach with a Cu modulation layer

Modulating Metallic Conductive Filaments Via Bilayer Oxides in Resistive Switching Memory

Self-Formed Conductive Nanofilaments in (bi, Mn)O-X for Ultralow-Power Memory Devices

Interface Engineering Via MoS2 Insertion Layer for Improving Resistive Switching of Conductive‐Bridging Random Access Memory

Modulating the Filament Rupture Degree of Threshold Switching Device for Self-Selective and Low-Current Nonvolatile Memory Application

Two-Dimensional (2D) Materials-Inserted Conductive Bridge Random Access Memory: Controllable Injection of Cations in Vertical Stacking Alignment of MoSe 2 Layers Prepared by Plasma-Assisted Chemical Vapor Reaction

A novel high-performance and energy-efficient RRAM device with multi-functional conducting nanofilaments

Ultralow Operating Voltage Nb2O5-Based Multilevel Resistive Memory with Direct Observation of Cu Conductive Filament

Memory Switching and Threshold Switching in a 3D Nanoscaled NbO X System

Performance Improvement of Conductive Bridging Random Access Memory by Electrode Alloying

Complementary Resistive Switching Behavior for Conductive Bridge Random Access Memory

Resistive Random Access Memory Cells with a Bilayer TiO2/SiOX Insulating Stack for Simultaneous Filamentary and Distributed Resistive Switching

Direct Observation of Conducting Nano Filaments in BMO Resistive Switching Memory

Extremely Low Program Current Memory Based on Self-Assembled All-Inorganic Perovskite Single Crystals.

Anisotropic Magnetoresistance of Nano-conductive Filament in Co/HfO2/Pt Resistive Switching Memory

Lower Power, Better Uniformity, and Stability CBRAM Enabled by Graphene Nanohole Interface Engineering

Vertical‐Switching Conductive Bridge Random Access Memory with Adjustable Tunnel Gap and Improved Switching Uniformity Using 2D Electron Gas

Conductive bridging random access memory—materials, devices and applications

Controllable Growth of Conductive Filaments in Sandwiched CBRAM Cells Using Self-Assembled Cu/W Multilayer Thin Films As the Electrodes

Optimization of Conductive Filament of Oxide-Based Resistive-Switching Random Access Memory for Low Operation Current by Stochastic Simulation