Abstract:Memristive switching in oxide semiconductors relies on the formation and disruption of conductive nano-filaments [1].This effect is considered promising for the next generation of non-volatile memories.Yet, the switching event is a complicated electronic and ionic process, which may involve more than one mechanism.In order to elucidate the switching mechanism, advanced microscopy investigations proved challenging because of heavily dependence of the results on specimen preparation techniques.Important information can be obtained if switching leads to a macroscopic change of nonelectrical properties, for instance magnetic properties.In this respect, n-type Mn-ZnO and p-type NiO provide a unique testbeds since the magnetic properties of these oxides are strongly dependent on the distribution of oxygen vacancies [2].We show that resistive switching in n-type ferromagnetic Mn-ZnO and p-type antiferromagnetic NiO coexists with a switching of the magnetic phase.Thin films of these oxides were sandwiched between two metallic electrodes and resistive switching was induced.Nano-devices were patterned out of the trilayers by resorting to electron beam lithography and physical etching.We found that a switching of the resistance corresponds to a switching of the magnetic phase in the film [3,4].By measuring the magnetic properties of the devices in the two resistive states, we can draw important conclusions on the underlying switching mechanism.For instance, in Mn-ZnO the effect is not filamentary type and occurs uniformly under the interface, whereas in NiO the effect is filamentary type.By measuring the change of magnetic properties we could exclude that switching was due to the formation of Ni-ion filaments across the device.We have demonstrated [4] that the switching is due to the formation and rapture of oxygen-vacancy filaments.

Direct Observation of Conducting Nano Filaments in BMO Resistive Switching Memory

Dynamic Evolution of Conducting Nanofilament in Resistive Switching Memories

Self-Formed Conductive Nanofilaments in (bi, Mn)O-X for Ultralow-Power Memory Devices

Revealing the Nature of Nano-filaments in Memristive Oxide Memories

Intrinsic Nanofilamentation in Resistive Switching

Observation of conducting filament growth in nanoscale resistive memories

Nanosized Conducting Filaments Formed by Atomic-Scale Defects in Redox-Based Resistive Switching Memories

In-Situ TEM Observation of Resistive Switching Behaviors by in Nonvolatile Memory

Uncorrelated Multiple Conductive Filament Nucleation and Rupture in Ultra-Thin High-Κ Dielectric Based Resistive Random Access Memory

Filament-Type Resistive Switching in Homogeneous Bi-Layer Pr0.7ca0.3mno3 Thin Film Memory Devices

Anisotropic Magnetoresistance of Nano-conductive Filament in Co/HfO2/Pt Resistive Switching Memory

Evolution of Ni Nanofilaments and Electromagnetic Coupling in the Resistive Switching of Nio

Direct Observations of Nanofilament Evolution in Switching Processes in HfO2‐Based Resistive Random Access Memory by in Situ TEM Studies

Modulating Metallic Conductive Filaments Via Bilayer Oxides in Resistive Switching Memory

Nanoscale Topotactic Phase Transformation in SrFeO x Epitaxial Thin Films for High-Density Resistive Switching Memory.

Memory Devices: Direct Observations of Nanofilament Evolution in Switching Processes in HfO2‐Based Resistive Random Access Memory by in Situ TEM Studies (adv. Mater. 10/2017)

Observing Resistive Switching Behaviors in Single Ta2O5 Nanotube-Based Memristive Devices

Observing Electrochemical Switching Behaviors in Crossbar Core-Shell Ni/NiO Nanowires Memristor

Ultralow Operating Voltage Nb2O5-Based Multilevel Resistive Memory with Direct Observation of Cu Conductive Filament

High Performance Bipolar Resistive Switching Memory Devices Based on Zn2SnO4 Nanowires

Direct Observation of Conducting Filaments in Tungsten Oxide Based Transparent Resistive Switching Memory.