A carbon conductive filament-induced robust resistive switching behavior for brain-inspired computing

Tianqi Yu,Dong Wang,Min Liu,Wei Lei,Suhaidi Shafie,Mohd Nazim Mohtar,Jindapetch Nattha,Dommelen Paphavee van,Zhiwei Zhao

DOI: https://doi.org/10.1039/d3mh01762a

IF: 13.3

2023-12-26

Materials Horizons

Abstract:Memristors have revolutionized the path forward for brain-inspired computing. However, the instability of the nucleation process of conductive filaments based on active metal electrodes leads to the discrete distribution of switching parameters, which hinders the realization of high-performance and low-power devices for neuromorphic computing. In response, a carbon conductive filament-induced robust memristor is demonstrated with variation coefficients as low as 3.9 %/ -1.18 %, the threshold power as low as 10-9 W, the 3  106 s retention and 107 cycles endurance behaviors can be maintained. Recognition accuracy for Modified National Institute of Standards and Technology (MNIST) handwriting is as high as 96.87%, which is attributed to the high linearity of the iterative updating of synaptic weights. The demodulation and storage functions of American Standard Code for Information Interchange (ASCII) are demonstrated by programmable pulse modulation. Importantly, transmission electron microscopy (TEM) images allow the observation of carbon conducting filament paths formed in low resistance state. First-principles calculations analyze the energetics of defects involved in the diffusion of carbon atoms into MoTe2 films. This work presents a novel guideline for studying memristor-based neuromorphic computing.

materials science, multidisciplinary,chemistry