Abstract:Conductive filaments (CFs)-based resistive random access memory possesses the ability of scaling down to sub-nanoscale with high-density integration architecture, making it the most promising nanoelectronic technology for reclaiming Moore's law. Compared with the extensive study in inorganic switching medium, the scientific challenge now is to understand the growth kinetics of nanoscale CFs in organic polymers, aiming to achieve controllable switching characteristics toward flexible and reliable nonvolatile organic memory. Here, this paper systematically investigates the resistive switching (RS) behaviors based on a widely adopted vertical architecture of Al/organic/indium-tin-oxide (ITO), with poly(9-vinylcarbazole) as the case study. A nanoscale Al filament with a dynamic-gap zone (DGZ) is directly observed using in situ scanning transmission electron microscopy (STEM) , which demonstrates that the RS behaviors are related to the random formation of spliced filaments consisting of Al and oxygen vacancy dual conductive channels growing through carbazole groups. The randomicity of the filament formation can be depressed by introducing a cone-shaped contact via a one-step integration method. The conical electrode can effectively shorten the DGZ and enhance the localized electric field, thus reducing the switching voltage and improving the RS uniformity. This study provides a deeper insight of the multiple filamentary mechanisms for organic RS effect.

Dynamic Processes of Resistive Switching in Metallic Filament-Based Organic Memory Devices

Mechanism For Resistive Switching In An Oxide-Based Electrochemical Metallization Memory

Distinguishing Oxygen Vacancy Electromigration and Conductive Filament Formation in TiO2 Resistance Switching Using Liquid Electrolyte Contacts.

Nanosized Conducting Filaments Formed by Atomic-Scale Defects in Redox-Based Resistive Switching Memories

Filament-Type Resistive Switching in Homogeneous Bi-Layer Pr0.7ca0.3mno3 Thin Film Memory Devices

Intrinsic Nanofilamentation in Resistive Switching

Controllable Organic Resistive Switching Achieved by One-Step Integration of Cone-Shaped Contact

Dynamic Evolution of Conducting Nanofilament in Resistive Switching Memories

Direct Observation of Conducting Filaments in Tungsten Oxide Based Transparent Resistive Switching Memory.

The Unification of Filament and Interfacial Resistive Switching Mechanisms for Titanium Dioxide Based Memory Devices

Direct Observation of Indium Conductive Filaments in Transparent, Flexible, and Transferable Resistive Switching Memory

Direct Observation of Conducting Nano Filaments in BMO Resistive Switching Memory

Modulating Metallic Conductive Filaments Via Bilayer Oxides in Resistive Switching Memory

Field-dependent, organics assistant filamentary mechanism in both vertical and planar organic memories

Formation Process of Conducting Filament in Planar Organic Resistive Memory

Conductance Quantization in A Ag Filament-Based Polymer Resistive Memory

Single-crystalline Metal Filament-Based Resistive Switching in a Nitrogen-Doped Carbon Film Containing Conical Nanopores

A Study of Copper Oxide Based Resistive Switching Memory by Conductive Atom Force Microscope

Thermoelectric Seebeck Effect in Oxide-Based Resistive Switching Memory.

Resistive Switching Induced by Metallic Filaments Formation Through Poly(3,4-ethylene-dioxythiophene):Poly(styrenesulfonate)

Filament Growth Dynamics in Solid Electrolyte-Based Resistive Memories Revealed by in Situ TEM