Abstract:Neuromorphic functionalities in memristive devices are commonly associated with the ability to electrically create local conductive pathways by resistive switching. The archetypal correlated material, VO2, has been intensively studied for its complex electronic and structural phase transition as well as its filament formation under applied voltages. Local structural studies of the filament behavior are often limited due to time-consuming rastering which makes impractical many experiments aimed at investigating large spatial areas or temporal dynamics associated with the electrical triggering of the phase transition. Utilizing Dark Field X-ray Microscopy (DFXM), a novel full-field x-ray imaging technique, we study this complex filament formation process in-operando in VO2 devices from a structural perspective. We show that prior to filament formation, there is a significant gain of the metallic rutile phase beneath the metal electrodes that define the device. We observed that the filament formation follows a preferential path determined by the nucleation sites within the device. These nucleation sites are predisposed to the phase transition and can persistently maintain the high-temperature rutile phase even after returning to room temperature, which can enable a novel training/learning mechanism. Filament formation also appears to follow a preferential path determined by a nucleation site within the device which is predisposed to the rutile transition even after returning to room temperature. Finally, we found that small isolated low-temperature phase clusters can be present inside the high-temperature filaments indicating that the filament structure is not uniform. Our results provide a unique perspective on the electrically induced filament formation in metal-insulator transition materials, which further the basic understanding of this resistive switching.

Operando Direct Observation of Filament Formation in Resistive Switching Devices Enabled by a Topological Transformation Molecule

Observation of conducting filament growth in nanoscale resistive memories

Real time observation of nanoscale multiple conductive filaments in RRAM by using advanced in-situ TEM

A study of the transition between the non-polar and bipolar resistance switching mechanisms in the TiN/TiO2/Al memory

Multilevel Resistive Switching With Ionic And Metallic Filaments

Direct Observation of Conducting Nano Filaments in BMO Resistive Switching Memory

High-Resolution Full-field Structural Microscopy of the Voltage Induced Filament Formation in Neuromorphic Devices

Electrical evidence of atomic-size effects in the conduction filament of RRAM

Anisotropic Magnetoresistance of Nano-conductive Filament in Co/HfO 2 /Pt Resistive Switching Memory

The Unveiling Switching Mechanism of Oxide Electrolyte Based ReRAM

Formation Process of Conducting Filament in Planar Organic Resistive Memory

Magnetoresistance of conductive filaments in resistive switching Co/HfO 2 /Pt structures

Direct Observations of Nanofilament Evolution in Switching Processes in HfO2‐Based Resistive Random Access Memory by in Situ TEM Studies

Probing Electrochemistry at the Nanoscale: in Situ TEM and STM Characterizations of Conducting Filaments in Memristive Devices

A Comprehensive Simulation Study on Metal Conducting Filament Formation in Resistive Switching Memories

Progress in the Characterizations and Understanding of Conducting Filaments in Resistive Switching Devices

High-throughput phase-field simulations and machine learning of resistive switching in resistive random-access memory

Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode.

Three‐Dimensional Reconstruction of Conductive Filaments in HfOx‐Based Memristor

Dynamic Processes of Resistive Switching in Metallic Filament-Based Organic Memory Devices

In Situ Unveiling of the Resistive Switching Mechanism of Halide Perovskite-Based Memristors