Abstract:Organic-inorganic hybrid perovskite thin films with nanostructured polycrystalline grains have shown great potential in various nanoscale optoelectrical applications. Among them, the field of electrical memory has fallen behind due to insufficient knowledge of the related resistive switching characters and mechanisms. In the present work, switching behaviors of perovskite memory devices are systematically analyzed by comparing them with organic memory devices. We found that decreasing the conductivity of a polycrystalline perovskite thin layer would lead to unipolar switching behaviors, which is supplementary to the present perovskite memory family where bipolar switching is commonly reported. Moreover, our proposed symmetrical device with a nanoscale heterolayer structure enables us not only to achieve highly reproducible unipolar switching devices but also to settle the argument whether microconducting channels exist within perovskite memory devices through characterizing the microscopic morphological homogeneity. Surprisingly, the scanning electron microscopy results show that partial 10 pm large perovskite grains would be decomposed into various 100 nm small grains under high external bias, indicating the presence of microconducting channels. Furthermore, energy-dispersive X-ray spectroscopy results together with photoluminescence results of the perovskite thin film before and after applying bias are nearly identical, demonstrating that microconducting channels are formed without any difference in compositions or optical properties. Our discoveries provide a practical strategy to achieve electrical storage via organic-inorganic hybrid perovskite thin-film devices.

Conductive metallic filaments dominate in hybrid perovskite-based memory devices

Bifunctional resistive switching behavior in an organolead halide perovskite based Ag/CH3NH3PbI3−xClx/FTO structure

Resistive switching memory based on organic/inorganic hybrid perovskite materials

Silver Iodide Induced Resistive Switching in CsPbI3 Perovskite‐Based Memory Device

Dual Resistive Switching Performance Derived from Ionic Migration in Halide Perovskite Based Memory.

Memory Devices via Unipolar Resistive Switching in Symmetric Organic-Inorganic Perovskite Nanoscale Heterolayers

Bromine Vacancy Redistribution and Metallic‐Ion‐Migration‐Induced Air‐Stable Resistive Switching Behavior in All‐Inorganic Perovskite CsPbBr3 Film‐Based Memory Device

Effect of halide-mixing on the switching behaviors of organic-inorganic hybrid perovskite memory

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Resistance Switching Effect of Memory Device Based on All-Inorganic Cspbbri2 Perovskite

Lead-free CsCu<sub>2</sub>Br<sub>3</sub> perovskite for multilevel resistive switching memory

Conductance Quantization in A Ag Filament-Based Polymer Resistive Memory

Modulating Metallic Conductive Filaments Via Bilayer Oxides in Resistive Switching Memory

Single Crystal Halide Perovskite Film for Nonlinear Resistive Memory with Ultrahigh Switching Ratio.

Reset Voltage-Dependent Multilevel Resistive Switching Behavior in CsPb1- Xbi Xi3 Perovskite-Based Memory Device.

Resistive switching in benzylammonium-based Ruddlesden–Popper layered hybrid perovskites for non-volatile memory and neuromorphic computing

A Facile Synthesis of Ch3nh3pbbr3 Perovskite Quantum Dots and Their Application in Flexible Nonvolatile Memory

Controllable Volatile-to-nonvolatile Memristive Switching in Single-Crystal Lead-Free Double Perovskite with Ultralow Switching Electric Field

Simultaneously Elevating the Resistive Switching Level and Ambient-Air-stability of 3D Perovskite (Taz-H)pbbr3-based Memory Device by Encapsulating into Polyvinylpyrrolidone.

Quasi-2D Halide Perovskite Memory Device Formed by Acid-Base Binary Ligand Solution Composed of Oleylamine and Oleic Acid

Resistive switching memories with enhanced durability enabled by mixed-dimensional perfluoroarene perovskite heterostructures