Abstract:This study leverages the synergy of modulating conductive filament to render a significant breakthrough in memory window, extending up to 1 million, and retention for up to 10 years, fostering advanced paradigms in bionics. These results underscore the judicious regulation of ion migration as a viable route to high‐performance memristors for neuromorphic computing applications. Memristors offer a promising solution to address the performance and energy challenges faced by conventional von Neumann computer systems. Yet, stochastic ion migration in conductive filament often leads to an undesired performance tradeoff between memory window, retention, and endurance. Herein, a robust memristor based on oxygen‐rich SnO2 nanoflowers switching medium, enabled by seed‐mediated wet chemistry, to overcome the ion migration issue for enhanced analog in‐memory computing is reported. Notably, the interplay between the oxygen vacancy (Vo) and Ag ions (Ag+) in the Ag/SnO2/p++‐Si memristor can efficiently modulate the formation and abruption of conductive filaments, thereby resulting in a high on/off ratio (>106), long memory retention (10‐year extrapolation), and low switching variability (SV = 6.85%). Multiple synaptic functions, such as paired‐pulse facilitation, long‐term potentiation/depression, and spike‐time dependent plasticity, are demonstrated. Finally, facilitated by the symmetric analog weight updating and multiple conductance states, a high image recognition accuracy of ≥ 91.39% is achieved, substantiating its feasibility for analog in‐memory computing. This study highlights the significance of synergistically modulating conductive filaments in optimizing performance trade‐offs, balancing memory window, retention, and endurance, which demonstrates techniques for regulating ion migration, rendering them a promising approach for enabling cutting‐edge neuromorphic applications.

Competition Between Metallic and Vacancy Defect Conductive Filaments in a CH3NH3PbI3-Based Memory Device

Modulating Metallic Conductive Filaments Via Bilayer Oxides in Resistive Switching Memory

A study of the transition between the non-polar and bipolar resistance switching mechanisms in the TiN/TiO2/Al memory

Conductive metallic filaments dominate in hybrid perovskite-based memory devices

Silver Iodide Induced Resistive Switching in CsPbI3 Perovskite‐Based Memory Device

Modulating the Filament Rupture Degree of Threshold Switching Device for Self-Selective and Low-Current Nonvolatile Memory Application

PbI3− ion abnormal migration in CH3NH3PbIxCl3-x ultralong single nanowire for resistive switching memories

Evolution of Conductive Filament and Its Impact on Reliability Issues in Oxide-Electrolyte Based Resistive Random Access Memory

Cluster-Type Filaments Induced by Doping in Low-Operation-Current Conductive Bridge Random Access Memory

Synergistically Modulating Conductive Filaments in Ion‐Based Memristors for Enhanced Analog In‐Memory Computing

Solid-Ionic Memory in a van der Waals Heterostructure

Multi-level optical memory with logical operation modulated by surface barrier in a single CH3NH3PbI3 perovskite micro/nanowire device

Bifunctional resistive switching behavior in an organolead halide perovskite based Ag/CH3NH3PbI3−xClx/FTO structure

Guiding the Growth of a Conductive Filament by Nanoindentation to Improve Resistive Switching

Atomic Scale Modulation of Self‐Rectifying Resistive Switching by Interfacial Defects

Direct Observation of Conducting Nano Filaments in BMO Resistive Switching Memory

Formation Process of Conducting Filament in Planar Organic Resistive Memory

Conductance Quantization in A Ag Filament-Based Polymer Resistive Memory

Dynamic Processes of Resistive Switching in Metallic Filament-Based Organic Memory Devices

Distinguishing Oxygen Vacancy Electromigration and Conductive Filament Formation in TiO2 Resistance Switching Using Liquid Electrolyte Contacts.

Conductive Defect States Based Filament In Mom Structure Rram