Abstract:Metal oxide ZrO2 has been widely explored for resistive switching application due to excellent properties like high ON/OFF ratio, superior data retention, and low operating voltage. However, the conduction mechanism at the atomistic level is still under debate. Therefore, we have performed comprehensive insights into the role of neutral and charged oxygen vacancies in conduction filament (CF) formation and rupture, which are demonstrated using the atomistic simulation based on density functional theory (DFT). Formation energy demonstrated that the fourfold coordinated oxygen vacancy is more stable. In addition, the electronic properties of the defect included supercell confirm the improvement in electrical conductivity due to the presence of additional energy states near Fermi energy. The CF formation and rupture using threefold and fourfold oxygen vacancies are demonstrated through cohesive energy, electron localization function (ELF), and band structure. Cohesive energy analysis confirms the cohesive nature of neutral oxygen vacancies while the isolated behavior for +2 charged oxygen vacancies in the CF. In addition, Nudged Elastic Band (NEB) calculation is also performed to analyze the oxygen vacancy diffusion energy under different paths. Moreover, we have computed the diffusion coefficient and drift velocity of oxygen vacancies to understand the CF. This DFT study described detailed insight into filamentary type resistive switching observed in the experimentally fabricated device. Therefore, this fundamental study provides the platform to explore the switching mechanism of other oxide materials used for memristor device application.

Conductive Defect States Based Filament In Mom Structure Rram

Evolution of the conductive filament system in HfO2-based memristors observed by direct atomic-scale imaging

The role of single oxygen or metal induced defect and correlated multiple defects in the formation of conducting filaments

Structural Analysis and Performance in a Dual‐Mechanism Conductive Filament Memristor

A Comprehensive Simulation Study on Metal Conducting Filament Formation in Resistive Switching Memories

Gradual conductance modulation by defect reorganization in amorphous oxide memristors

First-principles simulation of neutral and charged oxygen vacancies in m-ZrO2: An origin of filamentary type resistive switching

Evolution of Conductive Filament and Its Impact on Reliability Issues in Oxide-Electrolyte Based Resistive Random Access Memory

A study of the transition between the non-polar and bipolar resistance switching mechanisms in the TiN/TiO2/Al memory

Justification and Monte Carlo Simulation of Microstructure Evolution Process of Conductive Filament in Reset Transition in Cu/Hfo2/Pt Rram

Atomic View of Filament Growth in Electrochemical Memristive Elements

On the origin of filamentary resistive switching in oxides-based memristive devices

Multilevel Resistive Switching With Ionic And Metallic Filaments

Distinguishing Oxygen Vacancy Electromigration and Conductive Filament Formation in TiO2 Resistance Switching Using Liquid Electrolyte Contacts.

Oxygen Migration Around the Filament Region in HfOx Memristors

Modeling the conduction mechanisms of intrinsic multi-level states in HfO<sub>x</sub>-based resistive random access memory

Direct Observation of Conducting Nano Filaments in BMO Resistive Switching Memory

Analysis on the Filament Structure Evolution in Reset Transition of Cu/HfO2/Pt RRAM Device.

Competition Between Metallic and Vacancy Defect Conductive Filaments in a CH3NH3PbI3-Based Memory Device

Direct Observation of Conversion Between Threshold Switching and Memory Switching Induced by Conductive Filament Morphology

Microscopic Origin of Transition from Threshold Switching to Memory Switching in Oxide-Electrolyte-Based Rram