Microscopic Origin of Transition from Threshold Switching to Memory Switching in Oxide-Electrolyte-Based Rram

Haitao Sun,Qi Liu,Shibing Long,Hangbing Lv,Ming Liu

DOI: https://doi.org/10.1109/icsict.2014.7021267

2014-01-01

Abstract:In this work, both memory switching (MS) and threshold switching (TS) are demonstrated in single Ag/SiO2/Pt planar structure device. After electroforming process with low current compliance (ICC), a discontinuous conductive filament (CF) is formed and device shows TS characteristics. When increasing ICC to relatively high value, a continuous CF is formed and device shows MS behavior. By controlling the ICC during electroforming process, different CF morphologies were captured by scanning electron microscopic. I-V fitting of transition regions between HRS and LRS of TS loop confirmed that the discontinuous CF is similar to typical multi-island tunneling system. Combining with KPFM test results, we demonstrated that the TS behavior is dominated by tunneling barrier modulation of discontinuous CF.