Abstract:Multi-level cell storage technology based on resistive random access memory (RRAM) with multi-level state characteristics is more attractive in achieving low-cost ultra-high-density nonvolatile memory. Although a large number of literatures have reported the multi-level state characteristics of RRAM, so far there is no unified model that can well explain the intrinsic reasons for the existence of intermediate resistance state (IRS) and the switching mechanism between different resistance states. Multi-level state characteristics are observed by I-V characteristic measurements on RRAM with TiN/HfOx/barrier layer/TiN stacks fabricated using a commercialized 28 nm CMOS process. Compared to other published resistive switching models, the proposed model based on trap-assisted tunneling is more consistent with the measured. The model can reproduce the multi-level state characteristics based on the mechanism that interaction between defects and oxygen vacancies at the interface of HfOx and TiN electrode, resulting in the formation of multiple weak conductive filaments. Furthermore, the wide spread of high resistance state (HRS) and the switching between HRS and IRS are determined by the distance of tunneling gap. As HfOx-based RRAM will soon be commercialized, it is becoming very urgent to clarify the switching mechanisms of multi-level state characteristics and propose a universal model. Consequently, this work satisfied the current demand and significantly advanced the understanding and development of commercialized, cost-effective, high-density multi-bit HfOx-based RRAM technology.

Comprehensive Trap-Level Study in Siox-Based Resistive Switching Memory

Reversible Transition of Volatile to Non-Volatile Resistive Switching in Cu/SiNx/ZnO/Pt Memristor

The voltage-triggered SET mechanism and self-compliance characteristics in intrinsic unipolar SiOx-based resistive switching memory

Multilevel Resistive Switching in Ag/Sio2/Pt Resistive Switching Memory Device

Investigation of Edge- and Bulk-Related Resistive Switching Behaviors and Backward-Scan Effects in SiOx-based Resistive Switching Memory

A study of the transition between the non-polar and bipolar resistance switching mechanisms in the TiN/TiO2/Al memory

Uniform, Fast, and Reliable LixSiOy-Based Resistive Switching Memory

Microscopic Origin of Transition from Threshold Switching to Memory Switching in Oxide-Electrolyte-Based Rram

Study on Resistive Switching Characteristics and Mechanisms of Cu/SiOx/TiN Structure Resistive Random Access Memory

Multilevel Resistive Switching Characteristics In Ag/Sio2/Pt Rram Devices

Electric-Controlled Resistive Switching and Different Synaptic Behaviors in p+-Si/n-ZnO Heterojunction Memristor

Modeling the conduction mechanisms of intrinsic multi-level states in HfO<sub>x</sub>-based resistive random access memory

Presetting Conductive Pathway Induced the Switching Uniformity Evolution of A-Sinx:H Resistive Switching Memory.

Multilevel switching mechanism for resistive random access memory based on Cu/SiOx/Al structure

Direct Observation of Conversion Between Threshold Switching and Memory Switching Induced by Conductive Filament Morphology

Sub-band Transport Mechanism and Switching Properties for Resistive Switching Nonvolatile Memories with Structure of Silver/aluminum Oxide/p-Type Silicon

Study of Multilevel High-Resistance States in HfOx-Based Resistive Switching Random Access Memory by Impedance Spectroscopy

Unveiling the Switching Mechanism of a TaO X /hfo 2 Self-Selective Cell by Probing the Trap Profiles with RTN Measurements

Complementary Resistive Switching Behavior Induced by Varying Forming Current Compliance in Resistance Random Access Memory

Resistive Switches and Memories from Silicon Oxide.

Self-Selection Effects and Modulation of Taox Resistive Switching Random Access Memory with Bottom Electrode of Highly Doped Si