Multilevel Resistive Switching in Ag/Sio2/Pt Resistive Switching Memory Device

Lifeng Liu,Di Yu,Wenjia Ma,Bing Chen,Feifei Zhang,Bin Gao,Jinfeng Kang

DOI: https://doi.org/10.7567/jjap.54.021802

IF: 1.5

2015-01-01

Japanese Journal of Applied Physics

Abstract:Ag/SiO2/Pt-based resistive random access memory (RRAM) devices were fabricated and studied. A multilevel resistive switching (RS) characteristic was observed in the Ag/SiO2/Pt-based RRAM devices. Four different resistive states were obtained under both the direct current (DC) sweep mode and the pulse voltage mode. Good endurance and retention characteristics of the Ag/SiO2/Pt RRAM device with multilevel resistance states were demonstrated. The mechanism of multilevel RS was discussed and a multiple-conductive-filament model was used to explain the multilevel RS phenomenon in the Ag/SiO2/Pt-based RRAM devices. (C) 2015 The Japan Society of Applied Physics