Nanoscale Topotactic Phase Transformation in SrFeO x Epitaxial Thin Films for High-Density Resistive Switching Memory.
Junjiang Tian,Haijun Wu,Zhen Fan,Yang Zhang,Stephen J Pennycook,Dongfeng Zheng,Zhengwei Tan,Haizhong Guo,Pu Yu,Xubing Lu,Guofu Zhou,Xingsen Gao,Jun-Ming Liu
DOI: https://doi.org/10.1002/adma.201903679
IF: 29.4
2019-01-01
Advanced Materials
Abstract:Resistive switching (RS) memory has stayed at the forefront of next-generation nonvolatile memory technologies. Recently, a novel class of transition metal oxides (TMOs), which exhibit reversible topotactic phase transformation between insulating brownmillerite (BM) phase and conducting perovskite (PV) phase, has emerged as promising candidate materials for RS memories. Nevertheless, the microscopic mechanism of RS in these TMOs is still unclear. Furthermore, RS devices with simultaneously high density and superior memory performance are yet to be reported. Here, using SrFeOx as a model system, it is directly observed that PV SrFeO3 nanofilaments are formed and extend almost through the BM SrFeO2.5 matrix in the ON state and are ruptured in the OFF state, unambiguously revealing a filamentary RS mechanism. The nanofilaments are approximate to 10 nm in diameter, enabling to downscale Au/SrFeOx/SrRuO3 RS devices to the 100 nm range for the first time. These nanodevices exhibit good performance including ON/OFF ratio as high as approximate to 10(4), retention time over 10(5) s, and endurance up to 10(7) cycles. This study significantly advances the understanding of the RS mechanism in TMOs exhibiting topotactic phase transformation, and it also demonstrates the potential of these materials for use in high-density RS memories.