Abstract:A facile and low-cost process was developed for fabricating write-once-read-many-times (WORM) Cu/Ag NPs/Alumina/Al memory devices, where the alumina passivation layer formed naturally in air at room temperature, whereas the Ag nanoparticle monolayer was in situ prepared through thermal annealing of a 4.5 nm Ag film in air at 150°C. The devices exhibit irreversible transition from initial high resistance (OFF) state to low resistance (ON) state, with ON/OFF ratio of 107, indicating the introduction of Ag nanoparticle monolayer greatly improves ON/OFF ratio by four orders of magnitude. The uniformity of threshold voltages exhibits a polar-dependent behavior, and a narrow range of threshold voltages of 0.40 V among individual devices was achieved upon the forward voltage. The memory device can be regarded as two switching units connected in series. The uniform alumina interfacial layer and the non-uniform distribution of local electric fields originated from Ag nanoparticles might be responsible for excellent switching uniformity. Since silver ions in active layer can act as fast ion conductor, a plausible mechanism relating to the formation of filaments sequentially among the two switching units connected in series is suggested for the polar-dependent switching behavior. Furthermore, we demonstrate both alumina layer and Ag NPs monolayer play essential roles in improving switching parameters based on comparative experiments.

The Growth Of Metallic Nanofilaments In Resistive Switching Memory Devices Based On Solid Electrolytes

Resistive Switching Devices Based on Nanocrystalline Solid Electrolyte (Agi)0.5(agpo3)0.5

Guiding the Growth of a Conductive Filament by Nanoindentation to Improve Resistive Switching

Modulating Metallic Conductive Filaments Via Bilayer Oxides in Resistive Switching Memory

Asymmetry-induced resistive switching in Ag-Ag$_{2}$S-Ag memristors enabling a simplified atomic-scale memory design

Electrochemical Reaction In Memristor Devices In A Set State

Direct Observation of Conducting Nano Filaments in BMO Resistive Switching Memory

Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode.

Phase Change Behavior in Ag10ge15te75 and the Electrolytic Resistive Switching in Both Amorphous and Crystalline Ag10ge15te75 Films

Observation of conducting filament growth in nanoscale resistive memories

Low-cost Fabrication and Polar-Dependent Switching Uniformity of Memory Devices Using Alumina Interfacial Layer and Ag Nanoparticle Monolayer

The Resistive Switching Mechanism Of Ag/Srtio3/Pt Memory Cells

Bipolar Resistive Switching Performance Of The Nonvolatile Memory Cells Based On (Agi)(0.2)(Ag2moo4)(0.8) Solid Electrolyte Films

Self-Assembly Growth and Size Control of Silver Nanocrystals for Nonvolatile Memory Applications

Electrochemical Resistive Switching in Nanoporous Hybrid Films by One-Step Molecular Layer Deposition

Nanoscale Topotactic Phase Transformation in SrFeO x Epitaxial Thin Films for High-Density Resistive Switching Memory.

Conductive metallic filaments dominate in hybrid perovskite-based memory devices

Electrochemical Metallization Resistive Memory Devices Using $\hbox{ZnS-SiO}_{2}$ as a Solid Electrolyte

Resistance Switching Characteristics of Solid Electrolyte Chalcogenide Ag(2)Se Nanoparticles for Flexible Nonvolatile Memory Applications.

Resistive switching and memory effects of AgI thin film

In Situ Observation of Nickel As an Oxidizable Electrode Material for the Solid-Electrolyte-Based Resistive Random Access Memory