Electrochemical Metallization Resistive Memory Devices Using $\hbox{ZnS-SiO}_{2}$ as a Solid Electrolyte

j q huang,l p shi,e g yeo,k j yi,rong zhao

DOI: https://doi.org/10.1109/LED.2011.2173457

IF: 4.8157

2012-01-01

IEEE Electron Device Letters

Abstract:The high performance of a resistive memory device based on electrochemical metallization is presented. With a solid electrolyte mixture consisting of zinc sulfide and silicon dioxide, the device combines the strengths of pure sulfide and pure oxide electrolytes, and exhibits various attractive characteristics such as forming-free switching, reasonably low currents, and high speed. Bipolar switchin...