Design Of High-Performance Memristor Cell Using W-Implanted Sio2 Films

Wenqing Li,Xinqiang Liu,Yongqiang Wang,Zhigao Dai,Wei Wu,L. Cheng,Yupeng Zhang,Qi Liu,Xiangheng Xiao,Changzhong Jiang
DOI: https://doi.org/10.1063/1.4945982
IF: 4
2016-01-01
Applied Physics Letters
Abstract:Highly reproducible bipolar resistance switching was demonstrated in a composite material of W-implanted silicon dioxide. Because of its excellent dielectric properties, SiO2 was selected as the sole active material for fabricating the resistance switching devices. The device employed a metal-insulator-semiconductor structure, showing an excellent resistance switching performance (the ON/OFF ratio is close to similar to 10(6)). In addition, this sandwich structure device shows a forming-free resistance switching behavior. The overall device performance of the SiO2-based memristor has the potential to open up a new avenue to a large-scale high-performance resistive random access memory, which could significantly impact their existing applications. (C) 2016 AIP Publishing LLC.
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