High Performance Full-Inorganic Flexible Memristor with Combined Resistance-Switching

Yuan Zhu,Jia-sheng Liang,Vairavel Mathayan,Tomas Nyberg,Daniel Primetzhofer,Xun Shi,Zhen Zhang

DOI: https://doi.org/10.1021/acsami.2c02264

2022-04-27

Abstract:Flexible memristors hold great promise for flexible electronics applications but are still lacking of good electrical performance together with mechanical flexibility. Herein, we demonstrate a full-inorganic nanoscale flexible memristor by using free-standing ductile α-Ag₂S films as both a flexible substrate and a functional electrolyte. The device accesses dense multiple-level nonvolatile states with a record high 10⁶ ON/OFF ratio. This exceptional memristor performance is induced by sequential processes of Schottky barrier modification at the contact interface and filament formation inside the electrolyte. In addition, it is crucial to ensure that the cathode junction, where Ag⁺ is reduced to Ag, dominates the total resistance and takes the most of setting bias before the filament formation. Our study provides a comprehensive insight into the resistance-switching mechanism in conductive-bridging memristors and offers a new strategy toward high performance flexible memristors.

materials science, multidisciplinary,nanoscience & nanotechnology

What problem does this paper attempt to address?

### Problems the Paper Attempts to Solve

This paper aims to address two main issues faced by Flexible Memristors (FMs) in high-performance electronic applications:

1. **Balancing Electrical Performance and Mechanical Flexibility**: Existing flexible memristors, while possessing a certain degree of mechanical flexibility, often have suboptimal electrical performance (such as the switching ratio between high/low resistance states, non-volatility, etc.). This limits their application in wearable electronic devices, such as electronic skin, artificial perception, and health monitoring.

2. **Material Selection and Design**: Current flexible memristors mostly use organic-inorganic hybrid materials or fully organic materials, which have some inherent drawbacks. For example, fully organic materials usually require a higher threshold voltage to switch resistance, while hybrid materials suffer from a shorter lifespan due to the incompatibility between inorganic electrolytes and flexible polymer substrates.

To solve these problems, the authors propose a novel all-inorganic nanoscale flexible memristor, using a free-standing α-Ag₂S film as the flexible substrate and functional electrolyte. This design not only achieves ultra-high electrical performance (with an ON/OFF ratio of up to 10⁶) but also maintains mechanical flexibility at room temperature. Additionally, the authors reveal the unique resistance switching mechanism of this memristor and propose new strategies for achieving high-performance flexible memristors.