Abstract:Memristive systems are an important class of nanoionic devices whose intriguing properties stem from formation/dissolution of localized conduction channels and have attracted extensive research interests as a disruptive technology for nonvolatile memory, in-memory logic, and brain-inspired computing. Here I will cover three topics regarding memristor research: 1) Mechanism: understandings of the switching mechanism and device dynamics are fundamentally important for guiding future device developments. We have performed systematic TEM studies on metal filaments based ReRAM devices, including both ex situ and in situ observations, on both vertical and planar device structures, in different material systems, and at different dimensions. The results reveal rich information about the structure, composition and chemical state of the filaments, the filament geometry and growth directions, as well as fundamental electrochemical dynamics that govern the ionic transport and filament growth processes [1-3]. We have used electrostatic force microscopy to directly probe oxygen ion migration and accumulation in HfO2 by in situ measurements of electrostatic force gradient between the probe and the sample, as systematically verified by the charge duration, oxygen gas eruption and controlled studies utilizing different electrolytes, field directions and environments. At higher voltages, oxygen–deficient nano-filaments are formed, as directly identified employing a CS-corrected transmission electron microscope [4]. 2) Device optimization: we engineered the analog switching linearity in TaOx based memristors by homogenizing the filament growth/dissolution rate via introduction of an ion diffusion limiting layer (DLL) at the TiN/TaOx interface. Important synaptic learning rules in biological brains such as spike timing dependent plasticity was implemented using these optimized devices [5]. In addition, we experimentally demonstrated physically evolving networks in nanoscale, solid-state, multi-terminal memristive devices and heterosynaptic plasticity, an important learning rule found in biological systems, was demonstrated in a system where activity of the modulatory terminal strongly affects the synaptic facilitation/depression between the preand post-synaptic terminals [6]. 3) Integration: Large-scale integration of memristive synapses faces great challenges such as the sneak path problem, which can be mitigated by introducing nonlinearity into the device on-state. We have obtained memristors with on-state nonlinearity by adopting a novel oxide heterostructure where each oxide layer can be tailed for a specific function during resistance switching [7], and by employing functionalized graphene as the electrode that has threshold switching characteristics [8].

Electrochemical Reaction In Memristor Devices In A Set State

The Growth Of Metallic Nanofilaments In Resistive Switching Memory Devices Based On Solid Electrolytes

Atomic View of Filament Growth in Electrochemical Memristive Elements

Probing Electrochemistry at the Nanoscale: in Situ TEM and STM Characterizations of Conducting Filaments in Memristive Devices

Solid-State Electrochemical Process and Performance Optimization of Memristive Materials and Devices

Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode.

Engineering the Synaptic Kinetic Process into Memristive Device

Memristive Behaviors in Ag2s Nano-Particles Assembly

Observation of conducting filament growth in nanoscale resistive memories

Interfacial Redox Processes in Memristive Devices Based on Valence Change and Electrochemical Metallization.

Memristors for Memory and Computing Applications

Filament Growth Dynamics in Solid Electrolyte-Based Resistive Memories Revealed by in Situ TEM

Observation of the Failure Mechanism in Ag10Ge15Te75-based Memristor Induced by Ion Transport

Reliable Low‐Current and Multilevel Memristive Electrochemical Neuromorphic Devices with Semi‐Metal Sb Filament

Emulation of Learning and Memory Behaviors by Memristor Based on Ag Migration on 2D MoS 2 Surface

High Performance Full-Inorganic Flexible Memristor with Combined Resistance-Switching

Guiding the Growth of a Conductive Filament by Nanoindentation to Improve Resistive Switching

Bipolar Electrochemical Mechanism for Mass Transfer in Nanoionic Resistive Memories

Synaptic Learning and Memory Functions in SiO2:Ag/TiO2 Based Memristor Devices

Emulation of Learning and Memory Behaviors by Memristor Based on Ag Migration on 2D MoS <sub>2</sub> Surface

Cu x S nanosheets with controllable morphology and alignment for memristor devices