Abstract:Memristive systems are an important class of nanoionic devices whose intriguing properties stem from formation/dissolution of localized conduction channels and have attracted extensive research interests as a disruptive technology for nonvolatile memory, in-memory logic, and brain-inspired computing. Here I will cover three topics regarding memristor research: 1) Mechanism: understandings of the switching mechanism and device dynamics are fundamentally important for guiding future device developments. We have performed systematic TEM studies on metal filaments based ReRAM devices, including both ex situ and in situ observations, on both vertical and planar device structures, in different material systems, and at different dimensions. The results reveal rich information about the structure, composition and chemical state of the filaments, the filament geometry and growth directions, as well as fundamental electrochemical dynamics that govern the ionic transport and filament growth processes [1-3]. We have used electrostatic force microscopy to directly probe oxygen ion migration and accumulation in HfO2 by in situ measurements of electrostatic force gradient between the probe and the sample, as systematically verified by the charge duration, oxygen gas eruption and controlled studies utilizing different electrolytes, field directions and environments. At higher voltages, oxygen–deficient nano-filaments are formed, as directly identified employing a CS-corrected transmission electron microscope [4]. 2) Device optimization: we engineered the analog switching linearity in TaOx based memristors by homogenizing the filament growth/dissolution rate via introduction of an ion diffusion limiting layer (DLL) at the TiN/TaOx interface. Important synaptic learning rules in biological brains such as spike timing dependent plasticity was implemented using these optimized devices [5]. In addition, we experimentally demonstrated physically evolving networks in nanoscale, solid-state, multi-terminal memristive devices and heterosynaptic plasticity, an important learning rule found in biological systems, was demonstrated in a system where activity of the modulatory terminal strongly affects the synaptic facilitation/depression between the preand post-synaptic terminals [6]. 3) Integration: Large-scale integration of memristive synapses faces great challenges such as the sneak path problem, which can be mitigated by introducing nonlinearity into the device on-state. We have obtained memristors with on-state nonlinearity by adopting a novel oxide heterostructure where each oxide layer can be tailed for a specific function during resistance switching [7], and by employing functionalized graphene as the electrode that has threshold switching characteristics [8].

Observation of the Failure Mechanism in Ag10Ge15Te75-based Memristor Induced by Ion Transport

A study of the transition between the non-polar and bipolar resistance switching mechanisms in the TiN/TiO2/Al memory

Resistive Switching Memristor: On the Direct Observation of Physical Nature of Parameter Variability

Understanding of the Volatile and Nonvolatile Switching in Ag-Based Memristors

TSSM: Three-State Switchable Memristor Model Based on Ag/TiOx Nanobelt/Ti Configuration

Evolution and modulation of Ag filament dynamics within memristive devices based on necklace-like Ag@TiO 2 nanowire networks

Solid-State Electrochemical Process and Performance Optimization of Memristive Materials and Devices

Gradual conductance modulation by defect reorganization in amorphous oxide memristors

Physical Mechanisms and Enhancement of Endurance Degradation of SiOx:Ag-based Volatile Memristors

Nonvolatile behavior of resistive switching memory in Ag/WO x /TiO y /ITO device based on WO x /TiO y heterojunction

Controllable analog-to-digital bipolar resistive switching behavior and mechanism analysis in 8-MnO2-based memristor

Memristors for Memory and Computing Applications

Stopping Voltage‐Dependent PCM and RRAM‐Based Neuromorphic Characteristics of Germanium Telluride

Electrochemical Reaction In Memristor Devices In A Set State

Unconventional Resistive Switching Behavior in Fibroin‐Based Memristor

In-situ Study of Understanding the Resistive Switching Mechanisms of Nitride-based Memristor Devices

Probing Electrochemistry at the Nanoscale: in Situ TEM and STM Characterizations of Conducting Filaments in Memristive Devices

Modeling the AgInSbTe Memristor

Competition Between Metallic and Vacancy Defect Conductive Filaments in a CH3NH3PbI3-Based Memory Device

Improved resistive switching performance and mechanism analysis of MoO 3 nanorods based memristors

Transition from synaptic simulation to nonvolatile resistive switching behavior based on an Ag/Ag:ZnO/Pt memristor.