Abstract:In this study, a memristor with the simple structure Ag/poly(3,4-ethylenedioxythiophene):poly (styrenesulphonate) (PEDOT:PSS)/Ta was fabricated. Essential synaptic plasticity and learning behaviours were emulated using this memristor, including short-term plasticity, long-term plasticity, spike-timing-dependent plasticity and spike-rate-dependent plasticity. Important time constants were extracted from these synaptic modifications, which are associated with brain learning and memory functions. It was clearly demonstrated that the movement of the Ag interface upon the initiation of a redox reaction accounts for the resistive switching mechanism of our memristor. The conducting path in the polymer layer and the elastic effect of the polymer matrix were suggested to be considered in the memory and learning processes. Moreover, the energy band diagram of our memristor was drawn after the cross-sectional transmission electron microscopy images were analysed. It was found that a natural p-n junction in the PEDOT:PSS/Ta compound was formed. This resulted in rectifying, high resistance and low power consumption. Our device structure may be considered a feasible prototype for integrating memristors into a large-scale neuromorphic circuit.

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