Abstract:A physical model with two types of junctions in silver nanowires is proposed to explain resistive switching in nanowire networks of any concentration. Random networks offer fertile ground for achieving complexity and criticality, both crucial for an unconventional computing paradigm inspired by biological brains' features. In this work, characterizing and modeling different electrical transport regimes of self‐assemblies of silver nanowires (AgNWs) are focused. As percolation plays an essential role in such a scenario, a broad range of areal density coverage is examined. Close‐to‐percolation realizations (usually used to demonstrate neuromorphic computing capabilities) have high pristine resistance and require an electrical activation. Until now, highly conductive over‐percolated systems (commonly used in electrode fabrication technology) have not been thoroughly considered for hardware‐based neuromorphic applications, even though biological systems exhibit such an extremely high degree of interconnections. Here, it is shown that high current densities in over‐percolated low‐resistance AgNW networks induce a fuse‐type process, allowing a switching operation. Such electro‐fusing discriminates between weak and robust NW‐to‐NW links and enhances the role of filamentary junctions. Their reversible resistive switching enable different conductive paths exhibiting linear I–V features. Both percolation regimes are experimentally studied and proposed a model comprising two types of junctions that can describe, through numerical simulations, the overall behavior and observed phenomenology. These findings reveal a potential interplay of functionalities of neuromorphic systems and transparent electrodes.

Evolution of Resistive Switching over Bias Duration of Single Ag2s Nanowires

Resistive Switching and Metallic-Filament Formation in Ag2S Nanowire Transistors

Resistive switching in nanogap systems on SiO2 substrates

Nonvolatile resistive switching in single crystalline ZnO nanowires.

Resistive switching in the devices of Ag/amorphous Ag 30 Ge 17 Se 53 films/Pt

Evolution and modulation of Ag filament dynamics within memristive devices based on necklace-like Ag@TiO 2 nanowire networks

Evolution of Resistive Switching Polarity in Au/Ar + Bombarded SrTi 0.993 Nb 0.007 O 3 /in Sandwiches

Improvement of Resistive Switching in Nio-Based Nanowires by Inserting Pt Layers

Voltage-time dilemma and stochastic threshold-voltage variation in pure-silver atomic switches

Atomic Switches of Metallic Point Contacts by Plasmonic Heating.

Fabrication of A Nanoelectromechanical Switch Using A Suspended Carbon Nanotube

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Resistive Switching Devices Based on Nanocrystalline Solid Electrolyte (Agi)0.5(agpo3)0.5

Observing "Quantized" Conductance Steps in Silver Sulfide: Two Parallel Resistive Switching Mechanisms

Observing Resistive Switching Behaviors in Single Ta2O5 Nanotube-Based Memristive Devices

Voltage-time dilemma and stochastic threshold voltage variation in pure silver atomic switches

Evolution of Ni Nanofilaments and Electromagnetic Coupling in the Resistive Switching of Nio

Nanocrystalline Si Pathway Induced Unipolar Resistive Switching Behavior from Annealed Si-rich SiNx/SiNy Multilayers

Resistive Switching and Synaptic Behaviors of Tan/Al2o3/Zno/Ito Flexible Devices with Embedded Ag Nanoparticles

Two‐Junction Model in Different Percolation Regimes of Silver Nanowires Networks

Electrical Performance and Scalability of Pt Dispersed SiO2 Nanometallic Resistance Switch