Resistive switching in the devices of Ag/amorphous Ag 30 Ge 17 Se 53 films/Pt

L. Chen,H. X. Guo,Y. D. Xia,J. Yin,Z. G. Liu

DOI: https://doi.org/10.1007/s00339-010-5795-9

2010-01-01

Applied Physics A

Abstract:Electric switching and memory effects were observed on devices composed of an Ag 30 Ge 17 Se 53 (AGS) film sandwiched between Ag and Pt electrodes. The amorphous AGS films were prepared by the pulsed-laser deposition method and the lateral size of devices was scaled down to 1 μm by the focused ion beam nanofabrication technique. The devices were observed to show distinct bistability with the resistance ratio of the off/on states up to 10 6 and low switch voltage (0.22 V). At least 10 6 switching cycles were achieved in the “write-read-erase-read” cycle voltage.