Abstract:As an important method to further improve the storage density of resistive memory, multistage resistive switching devices have become an important research direction. However, no stable and controllable multistage resistive switching device has been prepared, and the working mechanism is still unclear. Here, a sandwich-structured device is simply prepared by spin coating, with the work layer is the Bi2FeCrO6 thin film. The device can realize bidirectional controllable multistage resistive switching behavior, the biggest on/off ratio is 104, and it can maintain stability without attenuation at 100 times slow loop and 104 times pulse cycle. The analyzes showed that the charged ions formed by defects in the device migrated under the action of an external electric field lead to the Schottky barrier height reversible changed. Which is the key to cause multistage resistive switching behavior. This work is the first report about the voltage control of bidirectional adjustable multistage resistive switching behavior in the Bi2FeCrO6 thin film. The principle of generation is analyzed, and important ideas and insights are provided for the preparation and treatment of related multistage resistive problems.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.0c16040?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.0c16040</a>.TEM diagram of the device cross section, XRD patterns and the atomic ratio of the BFCO thin film, time sequence diagrams, R–V curve, I–V curves at maximum bias voltage, Au/LNO/Au structure device and I–V curve, absorption spectrum of the BFCO/LNO device and band gap, and XPS patterns (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c16040/suppl_file/am0c16040_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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