Abstract:The resistive switching characteristics and switching mechanisms of the Au-implanted-ZrO2 film are extensively investigated for nonvolatile memory applications. Reversible resistance-switching behavior from a high resistance to low resistance state can be traced by dc voltage and pulse voltage. After more than 200 dc switching cycles, the resistance ratio between the high and low resistance states is more than 180 times under 0.7 V readout bias. In the voltage pulse test, the “write” and “erase” speeds can be as fast as 50 and 100 ns, respectively. No data loss is observed for more than 106 s. The formation and rupture of conducting filamentary paths related to the implanted Au ions are suggested to be responsible for the resistive switching phenomenon. The dependence of resistance on temperature indicates that the variable-range hopping conduction mechanism is dominated in the low-resistance state, while the current characteristics are governed by the trap-controlled space limited conduction mechanism in the high-resistance state.

Resistive Switching Memory Effect of ZrO2 Films with Zr+ Implanted

Resistive switching memory effect of films with implanted

Resistive switching in Nb-doped SrZrO3 memory films: An effective approach with a Cu modulation layer

Unipolar Resistive Switching of Au+-Implanted Zro2 Films

Resistance Switching of Au-Implanted-Zro2 Film for Nonvolatile Memory Application

Reproducible Unipolar Resistance Switching in Stoichiometric ZrO2 Films

Improvement Of Resistive Switching Properties In Zro2-Based Reram With Implanted Ti Ions

Resistive switching mechanism of Cu doped ZrO2-based RRAM

Improvement of Resistive Switching Properties in <formula formulatype="inline"><tex Notation="TeX">$ \hbox{ZrO}_{2}$</tex></formula>-Based <emphasis emphasistype="roman">ReRAM</emphasis> With Implanted Ti Ions

Improvement of Resistive Switching Properties in $ \Hbox{zro}_{2}$-Based ReRAM with Implanted Ti Ions

Nonvolatile Resistive Switching Memory Utilizing Gold Nanocrystals Embedded in Zirconium Oxide

Current–voltage characteristics of sol–gel derived SrZrO3 thin films for resistive memory applications

Engineering of Forming-Free Resistive Switching Characteristics in ZrO2films

Resistance switching study of stoichiometric ZrO2 films for non-volatile memory application

Improvement of Resistive Switching Properties in ZrO2- Based ReRAM with Implanted Metal Ions

Improvement of resistive switching characteristics in ZrO2 film by embedding a thin TiOx layer.

Self-Rectifying Effect In Gold Nanocrystal-Embedded Zirconium Oxide Resistive Memory

Resistance Switching Characteristics of Zirconium Oxide Containing Gold Nanocrystals for Nonvolatile Memory Applications.

Highly Transparent Bipolar Resistive Switching Memory in Zr0.5Hf0.5O2 Films with Amorphous Semiconducting In–Ga–Zn–O As Electrode

Nonpolar Nonvolatile Resistive Switching In Cu Doped Zro2

Complementary Resistive Switching Behavior Induced by Varying Forming Current Compliance in Resistance Random Access Memory