In Situ Current-Accelerated Phase Cycling with Metallic and Semiconducting Switching in Copper Nanobelts at Room Temperature
Ling Lee,Yu-Chuan Shih,Tzu-Yi Yang,Ying-Chun Shen,Yu-Chieh Hsu,Chun-Hsiu Chiang,Yi-Chung Wang,Bi-Hsuan Lin,Xioa-Yun Li,Shao-Chin Tseng,Mau-Tsu Tang,Faliang Cheng,Zhiming M. Wang,Yu-Lun Chueh
DOI: https://doi.org/10.1021/acsnano.0c09419
IF: 17.1
2021-03-01
ACS Nano
Abstract:Here, a current-accelerated phase cycling by an <i>in situ</i> current-induced oxidation process was demonstrated to reversibly switch the local metallic Cu and semiconducting Cu<sub>2</sub>O phases of patterned polycrystalline copper nanobelts. Once the Cu nanobelts were applied by a direct-current bias of ∼0.5 to 1 V in air with opposite polarities, the resistance between several hundred ohms and more than MΩ can be manipulated. In practice, the thickness of 60 nm with a moderate grain size inhibiting both electromigration and permanent oxidation is the optimized condition for reversible switching when the oxygen supply is sufficient. More than 40% of the copper localized beneath the positively biased electrode was oxidized assisted by the Joule heating, blocking the current flow. On the contrary, the reduction reaction of Cu<sub>2</sub>O was activated by the thermally assisted electromigration of Cu atoms penetrating the interlayer at the reverse bias. Finally, based on a high on/off ratio, the fast switching and the scalable production, reusable feasibility based on copper nanobelts such as the memristor array was demonstrated.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsnano.0c09419?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsnano.0c09419</a>.Endurance, stability, and retention test of Ni/Cu/Ni devices; nano-XANES based on fluorescence mode; simulated and fitted results of Cu K-edge XANES spectra; pseudo-operando SPEM results; linear-scale current–voltage relationship; experimental and fitted current–voltage relationship at reverse bias; current–voltage measurements and the SEM image of devices; dependence of current–voltage relationship on compliance current values; schematic procedure to reconstruct stoichiometric images based on the pseudo-operando nano-XANES mapping; pseudo-operando profile of oxidation in the device; pseudo-operando intensity mapping; data analysis procedure using EELS; vertical and pseudo-operando profile of oxidation in the device; dependence of device geometry on the switching (<a class="ext-link" href="/doi/suppl/10.1021/acsnano.0c09419/suppl_file/nn0c09419_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.
materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology