Abstract:Exploration of novel resistive switching materials attracts attention to replace conventional Si-based transistors and to achieve neuromorphic computing that can surpass the limit of the current Von-Neumann computing for the time of Internet of Things (IoT). Materials priorly used to serve in batteries have demonstrated metal-insulator transitions upon an electrical biasing due to resulting compositional change. This property is desirable for future resistive switching devices. Amorphous lithium lanthanum titanate (a-LLTO) was originally developed as a solid-state electrolyte with relatively high lithium ionic conductivity and low electronic conductivity among oxide-type solid electrolytes. However, it has been suggested that electric conductivity of a-LLTO changes depending on oxygen content. In this work, the investigation of switching behavior of a-LLTO was conducted by employing a range of voltage sweep techniques, ultimately establishing a stable and optimal operating condition within the voltage window of -3.5 V to 3.5 V. This voltage range effectively balances the desirable trait of a substantial resistance change by three orders of magnitude with the imperative avoidance of LLTO decomposition. This switching behavior is also confirmed at nanodevice of Ni/LLTO/Ni through in-situ biasing inside focused-ion beam/scanning electron microscope (FIB-SEM). Experiment and computation with different LLTO composition shows that LLTO has two distinct conductivity states due to Ti reduction. The distribution of these two states is discussed using simplified binary model, implying the conductive filament growth during low resistance state. Consequently, our study deepens understanding of LLTO electronic properties and encourages the interdisciplinary application of battery materials for resistive switching devices.

Scalable $\rm Al_2O_3-TiO_2$ Conductive Oxide Interfaces as Defect Reservoirs for Resistive Switching Devices

Identifying and Engineering the Electronic Properties of the Resistive Switching Interface

Controllable volatile to nonvolatile resistive switching conversion and conductive filaments engineering in Cu / ZrO 2 / Pt devices

Elucidating Dynamic Conductive State Changes in Amorphous Lithium Lanthanum Titanate for Resistive Switching Devices

Improving HfO 2 -Based Resistive Switching Devices by Inserting a TaO x Thin Film via Engineered In Situ Oxidation

Probing Resistive Switching in HfO2/Al2O3 Bilayer Oxides Using In-Situ Transmission Electron Microscopy

Nonvolatile resistive switching in Pt/laALO3/srTiO3 heterostructures

Ab Initio Modeling Of Resistive Switching Mechanism In Binary Metal Oxides

Resistive Switching Effect In Titanium Oxides

Lithium Incorporation Enhanced Resistive Switching Behaviors in Lithium Lanthanum Titanium Oxide-Based Heterostructure

Atomic Scale Modulation of Self‐Rectifying Resistive Switching by Interfacial Defects

Modulation of Nonlinear Resistive Switching Behavior of A Taox-Based Resistive Device Through Interface Engineering

The Evolution of Resistive Switching Behaviors Dependent on Interface Transition Layers in Cu/Al/FTO Nanostructure

Silicon Oxide (SiO x ): A Promising Material for Resistance Switching?

Anatomy of high-uniform unidirectional volatile switching behavior in SiO2/TiO2-based selection device

Controllable Organic Resistive Switching Achieved by One-Step Integration of Cone-Shaped Contact

Programmable Complementary Resistive Switching Behaviours of a Plasma-Oxidised Titanium Oxide Nanolayer

Current‐Induced Planar Resistive Switching Mediated by Oxygen Migration in NiO/Pt Bilayer

Metal/TiO 2 Interfaces for Memristive Switches

Resistive Switches and Memories from Silicon Oxide.

Nanosized Conducting Filaments Formed by Atomic-Scale Defects in Redox-Based Resistive Switching Memories