Abstract:The interface-type resistive switching devices exhibiting bipolar and multi-level resistive switching have been considered as the key component for neuromorphic device applications. To directly observe the microscopic details of underlying electrochemical redox reactions occuring at a metal/oxide interface, we implemented in situ resistive switching of TiN/Pr0.7Ca0.3MnO3 (PCMO)/Pt junction devices in a transmission electron microscope (TEM). The in situ TEM observations directly show that an intermediate reaction layer (TiOxNy), growing and shrinking in the thickness range of a few nanometers at the TiN/PCMO interface in response to the applied voltage, mainly determines the device resistance by limiting the transport of charge carriers via the Poole-Frenkel conduction mechanism. A detailed analysis of in situ TEM observations demonstrates that electrochemical redox reactions at the TiN/PCMO interface are facilitated by the electric field driven drift of oxygen as well as Ti ions with a much stronger influence of the oxygen ions. As such, the reaction kinetics are governed by the electric field acting across the TiOxNy reaction layer. This layer defines the critical field for the onset of switching, which is measured to be of the order of 106 V cm-1, a typical value at which the ionic drift velocity starts increasing exponentially with the field according to the nonlinear ionic drift model. The present results indicate that understanding the nature of the electric field driven drift of ions in a nanoscale solid electrolyte is a key to the precise control of the resistive switching of metal/insulator/metal junction devices via voltage stimulations.

Metal/TiO 2 Interfaces for Memristive Switches

Reversible Transition of Volatile to Non-Volatile Resistive Switching in Cu/SiNx/ZnO/Pt Memristor

Redox-controlled Memristive Switching in the Junctions Employing Ti Reactive Electrodes

Identifying and Engineering the Electronic Properties of the Resistive Switching Interface

Realizing A Family of Transition-Metal-Oxide Memristors Based on Volatile Resistive Switching at A Rectifying Metal/Oxide Interface

Role of interface reaction on resistive switching of Metal/a-TiO2/Al RRAM devices

Electrode-material dependent switching in TaO x memristors

Interfacial Redox Processes in Memristive Devices Based on Valence Change and Electrochemical Metallization.

Nonvolatile resistive switching memory behavior of the TiOx-based memristor

Oxygen vacancies dynamics in redox-based interfaces: Tailoring the memristive response

Scalable $\rm Al_2O_3-TiO_2$ Conductive Oxide Interfaces as Defect Reservoirs for Resistive Switching Devices

Observation of Two Resistance Switching Modes in TiO2memristive Devices Electroformed at Low Current

In situ TEM observation on the interface-type resistive switching by electrochemical redox reactions at a TiN/PCMO interface

Influences Of Interface States On Resistive Switching Properties Of Tiox With Different Electrodes

Single- and Bi-Layer Memristive Devices with Tunable Properties Using Tiox Switching Layers Deposited by Reactive Sputtering

Interfacial Thermal Resistive Switching in (Pt,Cr)/SrTiO 3 Devices

Metal-oxide interface reactions and their effect on integrated resistive/threshold switching in NbOx

Resistive switching phenomena in TiOx nanoparticle layers for memory applications

Migration of Interfacial Oxygen Ions Modulated Resistive Switching in Oxide-Based Memory Devices

Resistive Switching Behavior and Mechanism in Flexible TiO2@Cf Memristor Crossbars

Interface Engineering for a VOx Based Memristor with an Ultralow Switching Voltage and Logic Functions